Datasheet > SB2040WT

SB2040WT

更新时间： 2024-11-21 14:49:51

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	174K
描述
肖特基二极管

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中文翻译

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数据手册

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SB2040WT 数据手册

SB2040WT

Schottky Barrier Diode

PINNING

DESCRIPTION

Cathode

Features

Anode

• Very low forward voltage

• Ultra small SMD package

Top View

Simplified outline SOD-523 and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RRM

V_RWM

V_R

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

V_RMS

I_FSM

Non-repetitive Peak Forward Surge Current at t ≤ 8.3 ms

Non-Repetitive Peak Forward Current

Power Dissipation

250

I_FM

℃

P_tot

150

Junction and Storage Temperature Range

T_j, T_stg

- 65 to + 125

Thermal Characteristics

Parameter

Symbol

R_θJA

Value

667

Unit

Typical Thermal Resistance Junction to Ambient ¹⁾

℃/W

Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

Characteristics at T_a= 25℃

Parameter

Reverse Breakdown Voltage

at I_R= 100 µA

Symbol

V_(BR)R

Min.

Typ.

Max.

Unit

Forward Voltage

at I_F= 20 mA

at I_F= 200 mA

V_F

0.37

0.6

Reverse Current

at V_R= 30 V

at V_R= 10 V

I_R

µA

Diode Capacitance

at V_R= 0 V, f = 1 MHz

C_tot

t_rr

Reverse Recovery Time

at I_F= 1_R= 200 mA, I_rr= 0.1 x I_R, R_L= 100 Ω

1 / 3

Dated : 14/01/2023 Rev:03

12 3

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