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SB170 PDF预览

SB170

更新时间: 2024-11-25 22:50:19
品牌 Logo 应用领域
美台 - DIODES 整流二极管瞄准线高压
页数 文件大小 规格书
2页 66K
描述
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

SB170 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-41
包装说明:PLASTIC PACKAGE-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.21
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW POWER LOSS
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.7 VJEDEC-95代码:DO-41
JESD-30 代码:O-PALF-W2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:40 A
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:70 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:MATTE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

SB170 数据手册

 浏览型号SB170的Datasheet PDF文件第2页 
SB170 - SB1100  
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER  
Features  
·
·
Schottky Barrier Chip  
Guard Ring Die Construction for  
Transient Protection  
·
·
·
·
Ideally Suited for Automatic Assembly  
Low Power Loss, High Efficiency  
Surge Overload Rating to 25A Peak  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Application  
A
B
A
C
·
·
High Temperature Soldering:  
D
260°C/10 Second at Terminal  
Plastic Material: UL Flammability  
Classification Rating 94V-0  
Mechanical Data  
DO-41  
Dim  
A
Min  
25.4  
4.1  
Max  
¾
·
·
Case: Molded Plastic  
Terminals: Plated Leads -  
Solderable per MIL-STD-202, Method 208  
B
5.2  
·
·
·
·
Polarity: Cathode Band  
Weight: 0.3 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
C
0.71  
2.0  
0.86  
2.7  
D
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
SB170  
70  
SB180  
80  
SB190  
90  
SB1100  
100  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
49  
56  
63  
70  
V
A
Average Rectified Output Current  
@ TT = 85°C  
1.0  
25  
Non-Repetitive Peak Forward Surge Current 8.3ms  
single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
A
VFM  
IRM  
Forward Voltage @ IF = 1.0A  
@ TA  
=
25°C  
25°C  
0.80  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TA  
@ TA = 100°C  
=
0.5  
10  
mA  
Cj  
Typical Junction Capacitance (Note 2)  
80  
15  
50  
pF  
K/W  
K/W  
°C  
RqJL  
Typical Thermal Resistance Junction to Lead  
Typical Thermal Resistance Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
RqJA  
Tj, TSTG  
-65 to +125  
Notes:  
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
DS30116 Rev. B-1  
1 of 2  
SB170 - SB1100  

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