Datasheet > SAV-541-DP+

SAV-541-DP+

更新时间： 2024-02-19 20:35:21

品牌	Logo	应用领域
MINI		/
页数	文件大小	规格书
5页	314K
描述
RF Small Signal Field-Effect Transistor

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技术参数
数据手册

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SAV-541-DP+ 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.69	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

SAV-541-DP+ 数据手册

SAV-541-D+

E-PHEMT Transistor Die

Characterization Test Circuit

Source

Drain

Gate

Source

RF Reference Plane

Fig 1. Block Diagram of Test Circuit used.

Gain, Return loss, Output Power at 1dB compression (P1dB), Output IP3 (OIP3) and Noise figure measured using Agilent’s

N5242A PNA-X Microwave network analyzer.

Conditions:

1. Drain voltage (with reference to source, VDS)=3 or 4V as shown.

2. Gain voltage (with reference to source, VGS) is set to obtain desired Drain-Source current (IDS) as shown.

3. Gain:Pin=-25 dBm

4. Output IP3 (OIP3)= two tones spaced 1 MHz apart. 0 dBm/tone at output.

5. No external matching components used.

Die Layout

Bonding Pad Position

(Dimensions in µm, Typical)

Fig 2. Die Layout

Fig 3. Bonding Pad Positions

Critical Dimensions

Parameter

Values

100

Die Thickness, µm

Die Width, µm

400

Die Length, µm

400

Bond Pad Size, µm

75 x 75

Mini-Circuits

www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com

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