Datasheet > SAV-541-DP+

SAV-541-DP+

更新时间： 2024-02-05 00:33:59

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描述
RF Small Signal Field-Effect Transistor

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技术参数
数据手册

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SAV-541-DP+ 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.69	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

SAV-541-DP+ 数据手册

SAV-541-D+

E-PHEMT Transistor Die

DC Electrical Speciﬁcations¹at T_AMB=25°C, Frequency 0.45 to 6 GHz

Symbol

Parameter

Condition

Typical

Units

I_DSS

V_GS

V_TH

I_DSS

Drain Current

Operational Gate Voltage

Threshold Voltage

V_DS=3V, at respective I_DS

V_DS=3V, I_DS=4 mA

0.34

0.26

1.0

0.39

0.26

1.0

0.48

0.26

1.0

Saturated Drain Current

V_DS=3V, V_GS=0 V

µA

V_DS=3V, Gm=∆ I_DS/∆V_GS

∆V_GS=V_GS1-V_GS2

V_GS1=V_GSat respective I_DS

V_GS2=V_GS1+0.05V

G_M

Transconductance

251

327

392

RF Electrical Speciﬁcations²

V_DS=3V

V_DS=4V,

I_DS=15mA I_DS=30mA I_DS=60mA I_DS=15mA I_DS=30mA I_DS=60mA

Symbol

Parameter

Condition (GHz)

Typ.

Units

NF²

0.9

2.0

3.9

5.8

0.9

2.0

3.9

5.8

0.9

2.0

3.9

5.8

0.9

2.0

3.9

5.8

0.34

0.46

0.66

1.50

22.0

17.1

11.7

8.4

0.28

0.35

0.62

1.18

22.4

17.1

12.0

7.6

0.25

0.33

0.53

1.40

24.7

19.0

13.4

10.0

32.1

32.9

32.6

33.8

18.5

19.0

18.1

18.9

0.35

0.5

0.27

0.34

0.52

1.29

23.7

18.3

12.8

9.4

0.25

0.38

0.53

1.36

24.7

19.1

13.5

10.1

32.3

33.1

35.7

35.8

20.6

21.0

20.4

20.8

Noise Figure

0.63

1.47

22.0

17.1

11.8

8.4

Gain

OIP3

Gain

22.7

21.7

23.9

22.0

16.9

18.5

17.8

19.6

27.7

27.4

30.2

28.3

17.3

18.1

17.7

18.8

23.0

22.1

24.4

22.5

20.0

21.4

20.2

22.3

27.8

27.7

30.0

28.3

18.5

20.3

20.0

20.8

Output IP3

dBm

Power output at 1 dB

Compression

P1dB³

1. Measured on industry standard SOT-343 (SC-70) package.

2. Measured on die using GSG (Ground-Signal-Ground) probe. See ﬁgure 1.

3. Drain current was allowed to increase during compression measurements.

Absolute Maximum Ratings⁴

Max.

Units

Symbol

Parameter

V_DS

Drain-Source Voltage

Gate-Source Voltage

Gate-Drain Voltage

Drain Current

-5 to 0.7

120

V_GS

V_GD

I_DS

dBm

°C

I_GS

Gate Current

P_DISS

Total Dissipated Power

RF Input Power

360

P_IN

T_CH

T_OP

Θ_JC

Channel Temperature

Operating Temperature

Thermal Resistance

150

-40 to 85

160

°C

°C/W

4. Operation of this device above any one of these parameters may cause permanent damage.

5. Assumes DC quiescent conditions.

6. I_GSis limited to 2 mA during test.

Mini-Circuits

www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com

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