SAP08PY

更新时间： 2025-07-19 13:13:15

品牌	Logo	应用领域
三垦 - SANKEN		晶体二极管音频放大器晶体管达林顿晶体管温度补偿
页数	文件大小	规格书
6页	135K
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中文翻译

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数据手册

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SAP08PY 数据手册

Darlington transistors with

built-in temperature compensation diodes

for audio amplifier applications

series

SAP

Features

Built-in temperature compensation diodes and one emitter resistor

Real time temperature compensation

The temperature compensation diodes are mounted on one chip and placed in the center of the chip to

detect temperature rises directly.

Elimination of the temperature dependency of the idling current

The temperature coefficient of the diodes is optimized to have the idling current stabilized; thus one of

the fatal failure modes in conventional Darlington transistors, Thermal Runaway, is avoidable.

Symmetrical design for the PNP and the NPN pinouts

The new design minimizes the length of the pattern layout, and output distortions are controlled.

Darlington transistors, temperature compensation diodes and one emitter resistor are

incorporated in one package, so labor for parts insertion as well as the parts count is

reduced.

Line up

Part Number

P^C(W)

150

VCEO (V)

160

IC (A)

h_FE

Emitter resistor (Ω)

SAP15P/SAP15N

SAP10P/SAP10N

SAP08P/SAP08N

5000 to 20000

0.22

100

150

External Dimentions (Unit : mm)

Equivalent Circuit Diagram

±^0.2

3.2

±^0.3

±^0.2

9.9

±^0.2

15.4

NPN

PNP

4.5

1.6

Emitter resistor

RE: 0.22Ω Typ.

R:70Ω Typ.

(36°)

R: 70Ω Typ.

±^0.1

Emitter resistor

RE: 0.22Ω Typ.

1.35⁺^–⁰^0.^.2¹

0.65⁺^–0⁰^.^.¹²

0.8⁺^–0⁰^.^.¹²

0.65^–⁺⁰⁰^.^.¹²

±^0.1

2.54

(7.62)

(12.7)

±^0.1

3.81

±^0.3

17.8

Weight: approx 8.3g

±^0.1

a. Part Number

b. Lot Number

B D

S E

E S C D B

12 3 4 5 6

中文翻译

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