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SACB36 PDF预览

SACB36

更新时间: 2024-11-28 06:10:03
品牌 Logo 应用领域
力特 - LITTELFUSE 瞬态抑制器二极管
页数 文件大小 规格书
4页 176K
描述
Transient Voltage Suppression Diodes

SACB36 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:1.73
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:1719481Samacsys Pin Count:2
Samacsys Part Category:TVS Diode (Uni-directional)Samacsys Package Category:Diodes Moulded
Samacsys Footprint Name:DO-214AA (SMB J-Bend) _2Samacsys Released Date:2019-02-25 10:31:35
Is Samacsys:N其他特性:UL RECOGNIZED
最大钳位电压:60 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:500 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:BIDIRECTIONAL
最大功率耗散:3 W认证状态:Not Qualified
最大重复峰值反向电压:36 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

SACB36 数据手册

 浏览型号SACB36的Datasheet PDF文件第2页浏览型号SACB36的Datasheet PDF文件第3页浏览型号SACB36的Datasheet PDF文件第4页 
TransientVoltage Suppression Diodes  
Surface Mount – 500W > SACB series  
RoHS  
SACB Series  
Description  
SACB series is designed specifically to protect sensitive  
electronic equipment from voltage transients induced by  
lightning and other transient voltage events.  
Features  
tꢀ)BMPHFOꢁ'SFF  
tꢀ 3P)4ꢀDPNQMJBOU  
tꢀ 'PSꢀTVSGBDFꢀNPVOUFEꢀ  
applications in order to  
optimize board space  
tꢀ 'BTUꢀSFTQPOTFꢀUJNFꢄꢀ  
typically less than 1.0ps  
from 0V to BV min  
tꢀ &YDFMMFOUꢀDMBNQJOHꢀ  
capability  
Agency Approvals  
tꢀ -PXꢀJODSFNFOUBMꢀTVSHFꢀ  
resistance  
tꢀ -PXꢀQSPmMFꢀQBDLBHF  
tꢀ #VJMUꢁJOꢀTUSBJOꢀSFMJFG  
tꢀ 5ZQJDBMꢀNBYJNVNꢀ  
temperature coefficient  
ΔVBR = 0.1% x VBR@25°C x ΔT  
AGENCY  
AGENCY FILE NUMBER  
E230531  
tꢀ )JHI5FNQFSBUVSFꢀ  
soldering guaranteed:  
260°C/40 seconds at  
terminals  
tꢀ 1MBTUJDꢀQBDLBHFꢀIBTꢀ  
Underwriters Laboratory  
Flammability 94V-O  
tꢀ (MBTTꢀQBTTJWBUFEꢀDIJQꢀ  
junction  
tꢀ ꢂꢃꢃ8ꢀQFBLꢀQVMTFꢀQPXFSꢀ  
capability at 10×1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
tꢀ .BUUF5JOꢀ-FBEoGSFFꢀ1MBUFE  
Parameter  
Symbol  
PPPM  
Value  
500  
Unit  
W
Peak pulse power dissipation at  
ta=25OC by 10×1000μs waveform  
(fig.1)( Note 1)  
Power dissipation on infinite heat  
PM(AV)  
IPPM  
3.0  
W
Applications  
sink atTL=50ºC  
Peak Pulse Power Dissipation at  
Ta=25ºC by 10×1000μs waveform  
(Fig. 3) (Note 1)  
See  
Table 1  
TVS devices are ideal for the protection of I/O Interfaces,  
CC bus and other vulnerable circuits used inTelecom,  
Amps  
V
Operating Junction and Storage  
Temperature Range  
Computer, Industrial and Consumer electronic applications.  
T , TSTG -65 to 150  
°C  
J
TypicalThermal Resistance Junction  
to Lead  
TypicalThermal Resistance Junction  
to Ambient  
RuJL  
RuJA  
30  
°C/W  
°C/W  
120  
Note:  
1. Non-repetitive current pulse , per Fig. 3 and derated aboveTA = 25OC per Fig. 2.  
©2009 Littelfuse, Inc.  
19  
Revision: January 09, 2009  
SACB Series  
Specifications are subject to change without notice.  
Please refer to http://www.Littelfuse.com/series/SACB.html for current information.  

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