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SAC6.0-E3/51 PDF预览

SAC6.0-E3/51

更新时间: 2024-11-26 08:42:47
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
4页 80K
描述
Trans Voltage Suppressor Diode, 500W, 6V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AC, ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN

SAC6.0-E3/51 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-15包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.49最小击穿电压:7.9 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-204ACJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值反向功率耗散:500 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT APPLICABLE
极性:UNIDIRECTIONAL最大功率耗散:3 W
认证状态:Not Qualified最大重复峰值反向电压:6 V
表面贴装:NO技术:AVALANCHE
端子面层:MATTE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

SAC6.0-E3/51 数据手册

 浏览型号SAC6.0-E3/51的Datasheet PDF文件第2页浏览型号SAC6.0-E3/51的Datasheet PDF文件第3页浏览型号SAC6.0-E3/51的Datasheet PDF文件第4页 
SAC5.0 thru SAC50  
Vishay General Semiconductor  
Low Capacitance TRANSZORB® Transient Voltage Suppressors  
FEATURES  
• Glass passivated chip junction  
• Excellent clamping capability  
• 500 W peak pulse power capability with a  
10/1000 µs waveform, repetitive rate (duty cycle):  
0.01 %  
• Very fast response time  
• Low incremental surge resistance  
• Solder Dip 260 °C, 40 seconds  
• Component in accordance to RoHS 2002/95/EC  
DO-204AC (DO-15)  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against  
voltage transients induced by inductive load switching  
and lighting on ICs, MOSFET, signal lines of sensor  
units for consumer, computer, industrial and  
telecommunication.  
MAJOR RATINGS AND CHARACTERISTICS  
VWM  
PPPM  
PD  
5.0 V to 50 V  
500 W  
MECHANICAL DATA  
Case: DO-204AC, molded epoxy over passivated body  
Epoxy meets UL 94V-0 flammability rating  
3.0 W  
Tj max.  
175 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade  
Polarity: Color band denotes TVS cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
LIMIT  
Minimum 500 (1)  
3.0  
UNIT  
W
Peak pulse power dissipation with a 10/1000 µs waveform  
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 2)  
Peak pulse power surge current with a 10/1000 µs waveform (Fig. 3)  
Operating junction and storage temperature range  
PD  
W
see next table (1)  
IPPM  
A
TJ, TSTG  
- 55 to + 175  
°C  
Note:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2  
Document Number 88379  
27-Mar-06  
www.vishay.com  
1

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