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SA20C

更新时间： 2024-11-28 22:43:35
品牌 Logo 应用领域
强茂 - PANJIT 二极管脉冲局域网
页数 文件大小 规格书
6页 171K
描述
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 5.0 TO 170 Volts 500 Watt Peak Pulse Power)

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中文翻译

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SA20C 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-15
包装说明：O-PALF-W2针数：2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.63
Is Samacsys：N最大击穿电压：28.1 V
最小击穿电压：22.2 V击穿电压标称值：25.15 V
外壳连接：ISOLATED最大钳位电压：35.8 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-15
JESD-30 代码：O-PALF-W2最大非重复峰值反向功率耗散：500 W
元件数量：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
极性：BIDIRECTIONAL最大重复峰值反向电压：20 V
子类别：Transient Suppressors表面贴装：NO
技术：AVALANCHE端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

SA20C 数据手册

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SA5.0 THRU SA170CA  
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR  
VOLTAGE - 5.0 TO 170 Volts  
500 Watt Peak Pulse Power  
FEATURES  
l
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O  
DO-15  
l
l
Glass passivated chip junction  
500W Peak Pulse Power capability on  
10/1000 £gS waveform  
l
l
l
l
Excellent clamping capability  
Repetition rate(duty cycle): 0.01%  
Low incremental surge resistance  
Fast response time: typically less  
than 1.0 ps from 0 volts to BV for unidirectional  
and 5.0ns for bidirectional types  
l
l
£g  
Typical ID less than 1 A above 10V  
High temperature soldering guaranteed:  
300 ¢J/10 seconds/.375”,(9.5mm) lead  
length/5lbs., (2.3kg) tension  
MECHANICAL DATA  
Case: JEDEC DO-15 molded plastic over passivated junction  
Terminals: Plated Axial leads, solderable per MIL-STD-750, Method 2026  
Polarity: Color band denoteds positive end(cathode) except Bidirectionals  
Mounting Position: Any  
Weight: 0.015 ounce, 0.4 gram  
DEVICES FOR BIPOLAR APPLICATIONS  
For Bidirectional use C or CA Suffix for types  
Electrical characteristics apply in both directions.  
MAXIMUM RATINGS AND CHARACTERISTICS  
Ratings at 25 ¢J ambient temperature unless otherwise specified.  
RATING  
SYMBOL  
PPPM  
VALUE  
Minimum 500  
UNITS  
Watts  
£g  
Peak Pulse Power Dissipation on 10/1000 S waveform  
(Note 1, FIG.1)  
Peak Pulse Current of on 10/1000 £gS waveform  
(Note 1, FIG.3)  
Steady State Power Dissipation at TL=75 ¢J Lead  
IPPM  
PM(AV)  
IFSM  
SEE TABLE 1  
Amps  
Watts  
Amps  
1.0  
70  
Lengths .375”,(9.5mm) (Note 2)  
Peak Forward Surge Current, 8.3ms Single Half Sine-Wave  
Superimposed on Rated Load, Unidirectional only  
(JECED Method) (Note 3)  
Operating Junction and Storage Temperature Range  
TJ,TSTG  
-65 to +175  
¢J  
NOTES:  
¢J  
1.Non-repetitive current pulse, per Fig. 3 and derated above TA=25 per Fig. 2.  
2.Mounted on Copper Leaf area of 1.57in2(40mm2) PER Figure 5.  
3.8.3ms single half sine-wave or equivalent square wave, Duty cycle= 4 pulses per minute maximum.  
123456

中文翻译

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SA20C/51 VISHAY

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 		Trans Voltage Suppressor Diode, 20V V(RWM), Bidirectional
SA20C/51-E3 VISHAY

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 		DIODE 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Transient
SA20C/54 VISHAY

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 		Trans Voltage Suppressor Diode, 20V V(RWM), Bidirectional
SA20C/54-E3 VISHAY

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 		DIODE 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Transient
SA20C/73 VISHAY

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 		Trans Voltage Suppressor Diode, 20V V(RWM), Bidirectional
SA20C/73-E3 VISHAY

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 		DIODE 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Transient
SA20C/TR12 MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 20V V(RWM), Bidirectional, 1 Element, Silicon, DO-41
SA20C/TR8 MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 20V V(RWM), Bidirectional, 1 Element, Silicon, DO-41
SA20C51 VISHAY

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 		500W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN
SA20C-51 VISHAY

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 		Trans Voltage Suppressor Diode, 500W, 20V V(RWM), Bidirectional, 1 Element, Silicon, DO-20

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