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SA150CAB

更新时间： 2024-11-29 13:01:03
品牌 Logo 应用领域
力特 - LITTELFUSE 二极管
页数 文件大小 规格书
5页 137K
描述
Trans Voltage Suppressor Diode, 500W, Bidirectional, 1 Element, Silicon, DO-15

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SA150CAB 技术参数

是否无铅： 含铅生命周期：Transferred
零件包装代码：DO-15包装说明：O-PALF-W2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.4其他特性：UL LISTED
最大击穿电压：185 V最小击穿电压：167 V
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-15JESD-30 代码：O-PALF-W2
最大非重复峰值反向功率耗散：500 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
极性：BIDIRECTIONAL最大功率耗散：1 W
认证状态：Not Qualified表面贴装：NO
技术：AVALANCHE端子形式：WIRE
端子位置：AXIALBase Number Matches：1

SA150CAB 数据手册

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TransientVoltage Suppression Diodes  
Axial Leaded – 500W > SA series  
RoHS  
SA Series  
Description  
The SA Series is designed specifically to protect sensitive  
electronic equipment from voltage transients induced by  
lightning and other transient voltage events.  
Features  
tꢀ)BMPHFOꢁ'SFF  
tꢀ -PXꢀJODSFNFOUBMꢀTVSHFꢀ  
resistance  
tꢀ 3P)4ꢀDPNQMJBOU  
tꢀ 5ZQJDBMꢀ*R less than 1μA  
above 13V  
tꢀ 5ZQJDBMꢀNBYJNVNꢀ  
temperature coefficient  
ΔVBR = 0.1% x VBR@25°C x ΔT tꢀ )JHIꢀUFNQFSBUVSFꢀ  
soldering guaranteed:  
Agency Approvals  
tꢀ (MBTTꢀQBTTJWBUFEꢀDIJQꢀ  
260°C/40 seconds /  
0.375”,(9.5mm) lead  
length, 5 lbs., (2.3kg)  
tension  
tꢀ 1MBTUJDꢀQBDLBHFꢀIBTꢀ  
Underwriters Laboratory  
Flammability classification  
94V-O  
junction in DO-15 Package  
AGENCY  
AGENCY FILE NUMBER  
E128662/E230531  
tꢀ ꢂꢃꢃ8ꢀQFBLꢀQVMTFꢀ  
capability at 10×1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
tꢀ 'BTUꢀSFTQPOTFꢀUJNFꢄꢀ  
typically less than 1.0ps  
from 0 Volts to BV min  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
tꢀ .BUUFꢀ5JOꢀ-FBEoGSFFꢀQMBUFE  
tꢀ &YDFMMFOUꢀDMBNQJOHꢀ  
capability  
Parameter  
Symbol  
PPPM  
Value  
500  
Unit  
W
Peak Pulse Power Dissipation by  
10x1000μs test waveform (Fig.1)  
(Note 1)  
Applications  
Steady State Power Dissipation on  
infinite heat sink atTL=75ºC (Fig. 5)  
PD  
3.0  
70  
W
A
TVS devices are ideal for the protection of I/O interfaces,  
CC bus and other vulnerable circuits used in telecom,  
computer, industrial and consumer electronic applications.  
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave Unidirectional  
only (Note 2)  
V
IFSM  
Maximum Instantaneous Forward  
Voltage at 35A for Unidirectional  
only (Note 3)  
VF  
3.5/5.0  
V
Operating Junction and Storage  
Temperature Range  
T , TSTG -55 to 175  
°C  
J
TypicalThermal Resistance Junction  
to Lead  
RuJL  
RuJA  
20  
75  
°C/W  
°C/W  
TypicalThermal Resistance Junction  
to Ambient  
Notes:  
1. Non-repetitive current pulse , per Fig. 3 and derated aboveTA = 25OC per Fig. 2.  
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per  
minute maximum.  
3. VF<3.5V for devices of VBR <_ 200V and VF<5.0V for devices of VBR >_ 201V.  
©2009 Littelfuse, Inc.  
71  
Revision: January 09, 2009  
SA Series  
Specifications are subject to change without notice.  
Please refer to http://www.Littelfuse.com/series/SA.html for current information.  
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