Datasheet > S8C5H30L

S8C5H30L

更新时间： 2022-11-24 21:53:50

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅
页数	文件大小	规格书
11页	445K
描述
LOW GATE CHARGE StripFET III MOSFET

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S8C5H30L 数据手册

STS8C5H30L

N-CHANNEL 30V - 0.018Ω - 8A SO-8

P-CHANNEL 30V - 0.045Ω - 5A SO-8

LOW GATE CHARGE StripFET™ III MOSFET

Table 1: General Features

Figure 1: Package

TYPE

DSS

DS(on)

STS8C5H30L (N-Channel) 30 V < 0.022 Ω 8 A

STS8C5H30L (P-Channel) 30 V < 0.055 Ω 5 A

■ TYPICAL R

(N-Channel) = 0.018 Ω

(P-Channel) = 0.045 Ω

DS(on)

■ CONDUCTION LOSSES REDUCED

■ SWITCHING LOSSES REDUCED

■ LOW THRESHOLD DRIVE

■ STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

SO-8

DESCRIPTION

This MOSFET is the latest development of STMi-

croelectronics unique ”Single Feature Size™”

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

Figure 2: Internal Schematic Diagram

APPLICATIONS

■ DC/DC CONVERTERS

■ BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

■ POWER MANAGEMENT IN CELLULAR

PHONES

■ DC MOTOR DRIVE

Table 2: Order Codes

PART NUMBER

MARKING

PACKAGE

PACKAGING

STS8C5H30L

S8C5H30L

SO-8

TAPE & REEL

Rev. 2

September 2004

1/11

12 3 4 5 6 7...11

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