S852TF

更新时间： 2024-01-02 15:31:57

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
5页	87K
描述
Silicon NPN Planar RF Transistor

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中文翻译

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技术参数
数据手册

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S852TF 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.06
最大集电极电流 (IC)：	0.008 A	配置：	Single
最小直流电流增益 (hFE)：	40	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.03 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	5200 MHz	Base Number Matches：	1

S852TF 数据手册

Not for new design, this product will be obsoleted soon

S852TF

Vishay Semiconductors

Silicon NPN Planar RF Transistor

Description

The main purpose of this bipolar transistor is broad-

band amplification up to 2 GHz. In the space-saving

3-pin surface-mount SOT-490 package electrical per-

formance and reliability are taken to a new level cov-

ering a smaller footprint on PC boards than previous

packages.

16867

In addition to space savings, the SOT-490 provides a

higher level of reliability than other 3-pin packages,

such as more resistance to moisture.

Electrostatic sensitive device.

Observe precautions for handling.

Due to the short length of its leads the SOT-490 is

Applications

For low noise and high gain broadband amplifiers at

collector currents from 0.2 mA to 5 mA.

also reducing package inductances resulting in some

better electrical performance. All of these aspects

make this device an ideal choice for demanding RF

applications.

Features

• Low supply voltage

• Low current consumption

Mechanical Data

Typ: S852TF

Case: SOT-490 Plastic case

Weight: approx. 2.5 mg

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

• Low noise figure

• 50 Ω input impedance at 945 MHz

• High power gain

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Parts Table

Part

Marking

Package

S852TF

SOT-490

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

V_CBO

Value

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

V_CEO

V_EBO

I_C

°C

Total power dissipation

Junction temperature

Storage temperature range

T_amb≤ 125 °C

P_tot

T_j

150

T_stg

- 65 to + 150

°C

Document Number 85104

Rev. 1.4, 05-Sep-08

www.vishay.com

12 3 4 5

中文翻译

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S852TF_08	VISHAY	获取价格	Silicon NPN Planar RF Transistor
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