Datasheet > S852TW-GS18

S852TW-GS18

更新时间： 2024-01-04 07:13:22

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	314K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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S852TW-GS18 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.61	最大集电极电流 (IC)：	0.008 A
配置：	Single	最小直流电流增益 (hFE)：	40
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.03 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

S852TW-GS18 数据手册

S852T / S852TW

Vishay Semiconductors

Silicon NPN Planar RF Transistor

SOT-23

Features

• Low supply voltage

• Low current consumption

• 50 Ω input impedance at 945 MHz

• Low noise figure

• High power gain

SOT-323

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

19239

Electrostatic sensitive device.

Observe precautions for handling.

Applications

For low noise and high gain broadband amplifiers at

collector currents from 0.2 mA to 5 mA.

Mechanical Data

Typ: S852T

Case: SOT-23 Plastic case

Weight: approx. 8.0 mg

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Typ: S852TW

Case: SOT-323 Plastic case

Weight: approx. 6.0 mg

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Parts Table

Part

Marking

Package

S852T

852

SOT-23

S852TW

W52

SOT-323

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

V_CBO

Value

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

V_CEO

V_EBO

I_C

°C

Total power dissipation

Junction temperature

Storage temperature range

T_amb≤ 125 °C

P_tot

T_j

150

T_stg

- 65 to + 150

°C

Document Number 85052

Rev. 1.4, 02-May-05

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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