S852T-GS08

更新时间： 2024-02-20 19:38:11

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
8页	282K
描述
Silicon NPN Planar RF Transistor

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中文翻译

获取价格

技术参数
数据手册

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S852T-GS08 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.69	其他特性：	LOW NOISE
最大集电极电流 (IC)：	0.008 A	集电极-发射极最大电压：	6 V
配置：	SINGLE	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	5200 MHz
Base Number Matches：	1

S852T-GS08 数据手册

Not for new design, this product will be obsoleted soon

S852T / S852TW

Vishay Semiconductors

Silicon NPN Planar RF Transistor

SOT-23

Features

• Low supply voltage

• Low current consumption

• 50 Ω input impedance at 945 MHz

• Low noise figure

SOT-323

• High power gain

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

19239

Electrostatic sensitive device.

Observe precautions for handling.

Applications

For low noise and high gain broadband amplifiers at

collector currents from 0.2 mA to 5 mA.

Mechanical Data

Typ: S852T

Case: SOT-23 Plastic case

Weight: approx. 8.0 mg

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Typ: S852TW

Case: SOT-323 Plastic case

Weight: approx. 6.0 mg

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Parts Table

Part

Marking

Package

S852T

852

SOT-23

S852TW

W52

SOT-323

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

V_CBO

Value

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

V_CEO

V_EBO

I_C

°C

Total power dissipation

Junction temperature

Storage temperature range

T_amb≤ 125 °C

P_tot

T_j

150

T_stg

- 65 to + 150

°C

Document Number 85052

Rev. 1.5, 08-Sep-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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