S852TW

更新时间： 2024-01-08 21:44:54

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
7页	122K
描述
Silicon NPN Planar RF Transistor

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中文翻译

获取价格

技术参数
数据手册

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S852TW 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.06
最大集电极电流 (IC)：	0.008 A	配置：	Single
最小直流电流增益 (hFE)：	40	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.03 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	5200 MHz	Base Number Matches：	1

S852TW 数据手册

S852T/S852TW

Vishay Telefunken

Silicon NPN Planar RF Transistor

Electrostatic sensitive device.

Observe precautions for handling.

Applications

For low noise and high gain broadband amplifiers at

collector currents from 0.2 mA to 5 mA.

Features

Low supply voltage

Low noise figure

High power gain

Low current consumption

50 input impedance at 945 MHz

13 652

13 570

13 581

94 9280

S852T Marking: 852

S852TW Marking: W52

Plastic case (SOT 323)

1 = Collector, 2 = Base, 3 = Emitter

Absolute Maximum Ratings

amb

= 25 C, unless otherwise specified

Parameter

Test Conditions

Symbol

Value

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Total power dissipation

Junction temperature

Storage temperature range

CBO

CEO

EBO

≤ 125 C

tot

150

–65 to +150

amb

stg

Maximum Thermal Resistance

amb

= 25 C, unless otherwise specified

Parameter

Test Conditions

Symbol

thJA

Value

450

Unit

K/W

Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm

plated with 35 m Cu

Document Number 85052

Rev. 3, 20-Jan-99

www.vishay.de • FaxBack +1-408-970-5600

1 (7)

12 3 4 5 6 7

中文翻译

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