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S71WS256PC0HH3YL2 PDF预览

S71WS256PC0HH3YL2

更新时间: 2024-11-18 19:42:15
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器内存集成电路
页数 文件大小 规格书
11页 292K
描述
Flash, 16MX16, 80ns, PBGA84, 11.60 X 8 MM, 1.2 MM HEIGHT, HALOGEN AND LEAD FREE, FBGA-84

S71WS256PC0HH3YL2 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TFBGA, BGA84,10X12,32Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.65最长访问时间:80 ns
JESD-30 代码:R-PBGA-B84长度:11.6 mm
内存密度:268435456 bit内存集成电路类型:FLASH
内存宽度:16混合内存类型:FLASH+PSRAM
功能数量:1端子数量:84
字数:16777216 words字数代码:16000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-25 °C组织:16MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA84,10X12,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
电源:1.8 V编程电压:1.8 V
认证状态:Not Qualified座面最大高度:1.2 mm
子类别:Other Memory ICs最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
宽度:8 mmBase Number Matches:1

S71WS256PC0HH3YL2 数据手册

 浏览型号S71WS256PC0HH3YL2的Datasheet PDF文件第2页浏览型号S71WS256PC0HH3YL2的Datasheet PDF文件第3页浏览型号S71WS256PC0HH3YL2的Datasheet PDF文件第4页浏览型号S71WS256PC0HH3YL2的Datasheet PDF文件第5页浏览型号S71WS256PC0HH3YL2的Datasheet PDF文件第6页浏览型号S71WS256PC0HH3YL2的Datasheet PDF文件第7页 
S71WS-P based MCP Products  
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode  
Flash Memory with CellularRAM  
Data Sheet  
S71WS-P based MCP Products Cover Sheet  
Notice to Readers: This document states the current technical specifications regarding the Spansion  
product(s) described herein. Each product described herein may be designated as Advance Information,  
Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions.  
Publication Number S71WS-P_00  
Revision A  
Amendment 17  
Issue Date August 17, 2012  

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