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S71WS128NB0BAWAK2 PDF预览

S71WS128NB0BAWAK2

更新时间: 2024-01-06 12:49:41
品牌 Logo 应用领域
飞索 - SPANSION 静态存储器内存集成电路
页数 文件大小 规格书
13页 332K
描述
Memory Circuit, Flash+PSRAM, 8MX16, CMOS, PBGA84, 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE COMPLIANT, FBGA-84

S71WS128NB0BAWAK2 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA, BGA84,10X12,32
针数:84Reach Compliance Code:compliant
HTS代码:8542.32.00.71风险等级:5.82
Is Samacsys:N最长访问时间:80 ns
其他特性:PSRAM IS ORGANIZED AS 2M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLEJESD-30 代码:R-PBGA-B84
JESD-609代码:e1长度:11.6 mm
内存密度:134217728 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:16混合内存类型:FLASH+PSRAM
湿度敏感等级:3功能数量:1
端子数量:84字数:8388608 words
字数代码:8000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-25 °C
组织:8MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA84,10X12,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):260电源:1.8 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.00007 A子类别:Other Memory ICs
最大压摆率:0.054 mA最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:TIN SILVER COPPER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
宽度:8 mmBase Number Matches:1

S71WS128NB0BAWAK2 数据手册

 浏览型号S71WS128NB0BAWAK2的Datasheet PDF文件第2页浏览型号S71WS128NB0BAWAK2的Datasheet PDF文件第3页浏览型号S71WS128NB0BAWAK2的Datasheet PDF文件第4页浏览型号S71WS128NB0BAWAK2的Datasheet PDF文件第5页浏览型号S71WS128NB0BAWAK2的Datasheet PDF文件第6页浏览型号S71WS128NB0BAWAK2的Datasheet PDF文件第7页 
S71WS-N  
Stacked Multi-Chip Product (MCP)  
1.8 Volt-only Simultaneous Read/Write,  
Burst-mode Flash Memory with CellularRAM™  
S71WS-N Cover Sheet  
Data Sheet (Advance Information)  
Notice to Readers: This document states the current technical specifications regarding the Spansion  
product(s) described herein. Each product described herein may be designated as Advance Information,  
Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions.  
Publication Number S71WS-N_00  
Revision A  
Amendment 6  
Issue Date July 19, 2006  

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