是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | TFBGA, BGA84,10X12,32 |
针数: | 84 | Reach Compliance Code: | compliant |
HTS代码: | 8542.32.00.71 | 风险等级: | 5.82 |
Is Samacsys: | N | 最长访问时间: | 80 ns |
其他特性: | PSRAM IS ORGANIZED AS 2M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE | JESD-30 代码: | R-PBGA-B84 |
JESD-609代码: | e1 | 长度: | 11.6 mm |
内存密度: | 134217728 bit | 内存集成电路类型: | MEMORY CIRCUIT |
内存宽度: | 16 | 混合内存类型: | FLASH+PSRAM |
湿度敏感等级: | 3 | 功能数量: | 1 |
端子数量: | 84 | 字数: | 8388608 words |
字数代码: | 8000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -25 °C |
组织: | 8MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TFBGA | 封装等效代码: | BGA84,10X12,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
峰值回流温度(摄氏度): | 260 | 电源: | 1.8 V |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
最大待机电流: | 0.00007 A | 子类别: | Other Memory ICs |
最大压摆率: | 0.054 mA | 最大供电电压 (Vsup): | 1.95 V |
最小供电电压 (Vsup): | 1.7 V | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子面层: | TIN SILVER COPPER |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 40 |
宽度: | 8 mm | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
S71WS128NB0BAWAK3 | SPANSION | Memory Circuit, Flash+PSRAM, 8MX16, CMOS, PBGA84, 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE |
获取价格 |
|
S71WS128NB0BAWAM0 | SPANSION | Memory Circuit, Flash+PSRAM, 8MX16, CMOS, PBGA84, 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE |
获取价格 |
|
S71WS128NB0BAWAN2 | SPANSION | Memory Circuit, Flash+PSRAM, 8MX16, CMOS, PBGA84, 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE |
获取价格 |
|
S71WS128NB0BAWAP | SPANSION | Memory Circuit, 8MX16, CMOS, PBGA84, 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84 |
获取价格 |
|
S71WS128NB0BFWAH | SPANSION | Memory Circuit, 8MX16, CMOS, PBGA84, 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84 |
获取价格 |
|
S71WS128NB0BFWAH0 | SPANSION | Memory Circuit, Flash+PSRAM, 8MX16, CMOS, PBGA84, 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, |
获取价格 |