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S70GL02GS12FHIV10 PDF预览

S70GL02GS12FHIV10

更新时间: 2024-11-29 15:50:23
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 内存集成电路闪存
页数 文件大小 规格书
19页 321K
描述
Flash, 128MX16, 120ns, PBGA64, FBGA-64

S70GL02GS12FHIV10 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LBGA, BGA64,8X8,40Reach Compliance Code:compliant
HTS代码:8542.32.00.71风险等级:1.98
最长访问时间:120 ns备用内存宽度:8
启动块:BOTTOM/TOP命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PBGA-B64长度:13 mm
内存密度:2147483648 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:2K端子数量:64
字数:134217728 words字数代码:128000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128MX16
封装主体材料:PLASTIC/EPOXY封装代码:LBGA
封装等效代码:BGA64,8X8,40封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE页面大小:16/32 words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.4 mm部门规模:128K
最大待机电流:0.0002 A子类别:Flash Memories
最大压摆率:0.16 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:11 mm
Base Number Matches:1

S70GL02GS12FHIV10 数据手册

 浏览型号S70GL02GS12FHIV10的Datasheet PDF文件第2页浏览型号S70GL02GS12FHIV10的Datasheet PDF文件第3页浏览型号S70GL02GS12FHIV10的Datasheet PDF文件第4页浏览型号S70GL02GS12FHIV10的Datasheet PDF文件第5页浏览型号S70GL02GS12FHIV10的Datasheet PDF文件第6页浏览型号S70GL02GS12FHIV10的Datasheet PDF文件第7页 
S70GL02GS  
2 Gbit (256 MBytes), 3.0 V Flash Memory  
General Description  
The Cypress S70GL02GS 2-Gigabit MirrorBit® Flash memory device is fabricated on 65 nm MirrorBit Eclipse process technology. This  
device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that  
allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than  
standard single byte/word programming algorithms. This makes the device an ideal product for today’s embedded applications that  
require higher density, better performance and lower power consumption.  
This document contains information for the S70GL02GS device, which is a dual die stack of two S29GL01GS die. For detailed  
specifications, please refer to the discrete die datasheet.  
Document  
Cypress Document Number  
S29GL01GS Datasheet  
001-98285  
Distinctive Characteristics  
CMOS 3.0 Volt Core with Versatile I/O™  
Status Register, Data Polling, and Ready/Busy pin methods  
to determine device status  
Two 1024 Megabit (S29GL01GS) in a single 64-ball  
Fortified-BGA package (see S29GL01GS datasheet for full  
specifications)  
Advanced Sector Protection (ASP)  
– Volatile and non-volatile protection methods for each  
sector  
65 nm MirrorBit Eclipse™ process technology  
Single supply (VCC) for read / program / erase (2.7V to 3.6V)  
Versatile I/O Feature  
– Wide I/O voltage (VIO): 1.65V to VCC  
x16 data bus  
Separate 1024-bye One Time Program (OTP) array with two  
lockable regions  
– Available in each device Support for CFI (Common Flash  
Interface)  
WP# input  
16-word/32-byte page read buffer  
– Protects first or last sector, or first and last sectors of each  
device, regardless of sector protection settings  
512-byte Programming Buffer  
– Programming in Page multiples, up to a maximum of 512  
bytes  
Industrial temperature range (40°C to +85°C)  
Automotive AEC-Q100 Grade 3 (40°C to +85°C)  
Automotive AEC-Q100 Grade 2 (40°C to +105°C)  
100,000 erase cycles per sector typical  
20-year data retention typical  
Sector Erase  
– Uniform 128-Kbytes sectors  
– S70GL02GS: two thousand forty-eight sectors  
Suspend and Resume commands for Program and Erase  
Packaging Options  
operations  
– 64-ball LSH Fortified BGA, 13 mm 11 mm  
Cypress Semiconductor Corporation  
Document Number: 001-98296 Rev. *J  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised August 09, 2017  

S70GL02GS12FHIV10 替代型号

型号 品牌 替代类型 描述 数据表
S70GL02GS12FHIV20 CYPRESS

类似代替

Flash, 128MX16, 120ns, PBGA64, FBGA-64
S70GL02GS11FHI010 CYPRESS

类似代替

Flash, 128MX16, 110ns, PBGA64, FBGA-64

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