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S4PJHE3/86A PDF预览

S4PJHE3/86A

更新时间: 2024-01-15 06:34:27
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 106K
描述
Rectifier Diode, 1 Element, 4A, 600V V(RRM)

S4PJHE3/86A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.83
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.95 VJESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:100 A
元件数量:1最高工作温度:150 °C
最大输出电流:4 A最大重复峰值反向电压:600 V
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)Base Number Matches:1

S4PJHE3/86A 数据手册

 浏览型号S4PJHE3/86A的Datasheet PDF文件第2页浏览型号S4PJHE3/86A的Datasheet PDF文件第3页浏览型号S4PJHE3/86A的Datasheet PDF文件第4页浏览型号S4PJHE3/86A的Datasheet PDF文件第5页 
New Product  
S4PB thru S4PM  
Vishay General Semiconductor  
High Current Density Surface Mount  
Glass Passivated Rectifiers  
FEATURES  
eSMPTM Series  
• Very low profile - typical height of 1.1 mm  
• Ideal for automated placement  
• Glass passivated chip junction  
• Low forward voltage drop  
K
• High forward surge capability  
1
• Meets MSL level 1, per J-STD-020, LF  
maximum peak of 260 °C  
2
TO-277A (SMPC)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Anode 1  
Anode 2  
K
Cathode  
Halogen-free  
MECHANICAL DATA  
Case: TO-277A (SMPC)  
PRIMARY CHARACTERISTICS  
IF(AV)  
4.0 A  
Molding compound meets UL 94V-0 flammability  
rating.  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, high reliability/  
automotive grade (AEC-Q101 qualified)  
VRRM  
IFSM  
100 V to 1000 V  
100 A  
IR  
10 µA  
V
F at IF = 4 A  
TJ max.  
0.860 V  
150 °C  
Base P/N-M3 - halogen-free and RoHS compliant,  
commercial grade  
Base P/NHM3 - halogen-free and RoHS compliant,  
high reliability/automotive grade (AEC-Q101 qualified)  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 and M3 suffix meets JESD 201 class 1A whisker  
test, HE3 and HM3 suffix meets JESD 201 class 2  
whisker test  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power  
supplies, inverters, converters and freewheeling diodes  
for consumer, automotive and telecommunication.  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
S4PB  
S4PB  
100  
S4PD  
S4PD  
200  
S4PG  
S4PG  
400  
S4PJ  
S4PJ  
600  
S4PK  
S4PK  
800  
S4PM  
S4PM  
1000  
UNIT  
Device marking code  
VRRM  
IF(AV)  
Maximum repetitive peak reverse voltage  
Average forward current  
V
A
4.0  
Peak forward surge current 10 ms single half  
sine-wave superimposed on rated load  
IFSM  
100  
A
T
J, TSTG  
Operating junction and storage temperature range  
- 55 to + 150  
°C  
Document Number: 89032  
Revision: 30-Jul-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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