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S3B

更新时间: 2024-11-25 06:09:47
品牌 Logo 应用领域
DAESAN 二极管光电二极管
页数 文件大小 规格书
2页 336K
描述
CURRENT 3.0 Amperes VOLTAGE 50 to 1000 Volts

S3B 数据手册

 浏览型号S3B的Datasheet PDF文件第2页 
CURRENT 3.0 Amperes  
VOLTAGE 50 to 1000 Volts  
S3A THRU S3M  
Features  
· For surface mounted applications  
· Glass passivated junction  
· Low profile package  
DO-214AB (SMC)  
· Built-in strain relief, ideal for automated placement  
· Plastic package has Unerwrites Laboratory  
Flammability Classification 94V-0  
· High temperature soldering guaranteed: 250/10  
seconds, at terminals  
0.124(3.15)  
0.108(2.75)  
0.245(6.22)  
0.220(5.59)  
0.280(7.11)  
0.260(6.60)  
0.012(0.31)  
0.006(0.15)  
Mechanical Data  
0.103(2.62)  
0.079(2.00)  
· Case : JEDEC SMC(DO-214AB) molded plastic body  
· Terminals : Plated axial lead solderable per  
MIL-STD-750, method 2026  
· Polarity : Color band denotes cathode end  
· Mounting Position : Any  
0.008(0.203)  
MAX.  
0.050(1.27)  
0.030(0.76)  
0.320(8.13)  
0.305(7.75)  
· Weight : 0.007 ounce, 0.25 gram  
Dimensions in inches and (millimeters)  
Maximum Ratings And Electrical Characteristics  
(Ratings at 25ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive  
load. For capacitive load, derate by 20%)  
Symbols  
S3A  
S3B  
S3D  
S3G  
S3J  
S3K  
S3M  
Units  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
V
RRM  
RMS  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Volts  
Volts  
Volts  
V
Maximum DC blocking voltage  
V
DC  
100  
1000  
Maximum average forward rectified current  
at TL=75(Note 2)  
I
(AV)  
3.0  
100.0  
1.15  
Amps  
Peak forward surge current 8.3ms half sine  
wave superimposed on rated load  
(JEDEC method) TL=75℃  
IFSM  
Amps  
Volts  
μA  
Maximum instantaneous forward voltage  
at 1.0A  
V
F
T
T
A
=25℃  
1.0  
Maximum reverse  
current at rated voltage  
IR  
A=125℃  
250  
RθJL  
RθJA  
13.0  
47.0  
Typical thermal resistance (Note 2)  
/W  
trr  
Typical reverse capacitance (Note 3)  
Typical junction capacitance (Note 1)  
2.5  
μS  
CJ  
60.0  
pF  
T
J
Operating and storage temperature range  
-55 to +175  
TSTG  
Notes:  
(1) Measured at 1MHz and applied reverse voltage of 4.0V dc.  
(2) Thermal resistance from junction to ambient and from junction to lead mounted on 0.2×0.2"(0.5×0.5mm)  
copper opad areas.  
(3) Reverse recovery test conditions:IF=0.5A, IR=1.0A, Irr=0.25A  

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