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S30D50C PDF预览

S30D50C

更新时间: 2024-01-01 17:24:05
品牌 Logo 应用领域
WTE /
页数 文件大小 规格书
4页 77K
描述
30A DUAL SCHOTTKY BARRIER RECTIFIER

S30D50C 技术参数

生命周期:Active包装说明:R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.71
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.65 V
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:200 A元件数量:2
相数:1端子数量:3
最高工作温度:125 °C最低工作温度:-60 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
最大重复峰值反向电压:50 V最大反向电流:5000 µA
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

S30D50C 数据手册

 浏览型号S30D50C的Datasheet PDF文件第2页浏览型号S30D50C的Datasheet PDF文件第3页浏览型号S30D50C的Datasheet PDF文件第4页 
WTE  
POWER SEMICONDUCTORS  
Pb  
S30D30C – S30D60C  
30A DUAL SCHOTTKY BARRIER RECTIFIER  
Features  
!
Schottky Barrier Chip  
H
!
!
!
!
!
Guard Ring for Transient Protection  
Low Forward Voltage Drop  
Low Reverse Leakage Current  
High Surge Current Capability  
Plastic Material has UL Flammability  
Classification 94V-O  
TO-3P  
Dim  
A
B
C
D
E
Min  
3.20  
4.70  
Max  
3.50  
5.30  
23.00  
S
R
J
K
19.00  
2.80  
0.45  
PIN1  
2
3
3.20  
0.85  
16.20  
2.70  
3.65 Ø  
4.50  
5.65  
1.40  
2.50  
12.70  
6.00  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ L  
P
G
H
J
1.70  
3.15 Ø  
K
L
Mechanical Data  
!
!
N
Case: TO-3P, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-750, Method 2026  
Polarity: See Diagram  
Weight: 5.6 grams (approx.)  
5.25  
1.10  
M
N
P
M
A
11.70  
5.00  
R
S
!
!
!
!
!
B
All Dimensions in mm  
Mounting Position: Any  
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
C
PIN 1 -  
PIN 3 -  
+
Case, PIN 2  
G
D
E
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
S30D  
30C  
S30D  
35C  
S30D  
40C  
S30D  
45C  
S30D  
50C  
S30D  
60C  
Characteristic  
Symbol  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
30  
21  
35  
25  
40  
28  
45  
32  
50  
35  
60  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
42  
V
A
Average Rectified Output Current  
@TC = 95°C  
30  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
275  
A
Forward Voltage  
@IF = 15A  
VFM  
IRM  
0.55  
0.65  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
1.0  
60  
mA  
Typical Junction Capacitance (Note 1)  
Cj  
1100  
1.4  
pF  
°C/W  
°C  
Typical Thermal Resistance Junction to Case (Note 2)  
Operating and Storage Temperature Range  
RJC  
Tj, TSTG  
-65 to +150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
2. Thermal resistance junction to case mounted on heatsink.  
S30D30C – S30D60C  
1 of 4  
© 2006 Won-Top Electronics  

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