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S2GVB40-C PDF预览

S2GVB40-C

更新时间: 2024-11-21 12:55:35
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描述
Voltage 200V ~800V 2 Amp Glass Passivited Bridge Rectifers

S2GVB40-C 数据手册

 浏览型号S2GVB40-C的Datasheet PDF文件第2页 
S2GVB20-C ~ S2GVB80-C  
Voltage 200V ~ 800V  
2 Amp Glass Passivited Bridge Rectifiers  
Elektronische Bauelemente  
RoHS Compliant Product  
FEATURES  
GVB  
Ideal for printed circuit board  
Low forward voltage drop, high current capability  
Reliable low cost construction utilizing molded plastic  
technique results in inexpensive product  
These are Halogen & Pb Free components  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
15.9  
7.40  
9.60  
-
Min.  
Max.  
0.90  
4.10  
0.60  
1.10  
3.60  
A
B
C
D
E
15.3  
7.00  
9.00  
10.0  
1.20  
F
G
H
I
0.70  
3.90  
0.40  
0.70  
3.20  
1.40  
J
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.  
For capacitive load, de-rate current by 20%.)  
Part Number  
Parameter  
Symbol  
Unit  
S2GVB20-C  
S2GVB40-C  
S2GVB60-C  
S2GVB80-C  
Maximum Recurrent Peak Reverse Voltage  
VRRM  
IO  
200  
400  
600  
800  
V
A
Average Rectified Output Current @60H  
Z
2
sine wave, R-load, TA=25°C  
Peak Forward Surge Current @  
60HZ sine wave, 1 cycle, TA=25°C  
IFSM  
50  
A
Maximum Peak Forward Voltage2  
VFM  
IRRM  
1.05  
10  
V
Peak Reverse Current 1  
µA  
I2t Rating for Fusing @1mst8.3ms,  
TJ=25°C  
I2t  
10.4  
A2s  
Typical Thermal Resistance  
Typical Thermal Resistance  
R
θJA  
θJL  
62  
16  
°C/W  
°C/W  
°C  
R
Operating and Storage temperature range  
Notes  
TJ,TSTG  
150, -40~150  
1. VRM=VRRM, Pulse measurement, Rating of per diode.  
2. IFM=0.75A, Pulse measurement, Rating of per diode  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
04-Jun-2013 Rev. A  
Page 1 of 2  

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Rectifier Diode, 1 Phase, 1 Element, 2A, 2500V V(RRM), Silicon,