Datasheet > S2GBP80-C

S2GBP80-C

更新时间： 2024-11-20 12:46:55

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
2页	224K
描述
Voltage 200V ~800V 2.0 Amp Glass Passivited Bridge Rectifres

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中文翻译

获取价格

数据手册

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S2GBP80-C 数据手册

S2GBP20-C ~ S2GBP80-C

Voltage 200V ~ 800V

2.0 Amp Glass Passivited Bridge Rectifiers

Elektronische Bauelemente

RoHS Compliant Product

FEATURES

GBP



Ideal for printed circuit board

Low forward voltage drop, high current capability

Reliable low cost construction utilizing molded plastic

technique results in inexpensive product

These are Halogen & Pb Free components

This series is UL recognized under Component Index,

file number E255340



Millimeter

REF.

Min.

Max.

14.0

Min.

Max.

13.6

10.6

2.9

3.5

3.3

4.1

1.5

1.8

2.4

12.6

1.05

0.65

13.8

1.25

0.85

0.4

0.6

6.7

7.3

φ3.0

φ3.4

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, de-rate current by 20%.)

Part Number

Parameter

Symbol

Unit

S2GBP20-C

S2GBP40-C

S2GBP60-C S2GBP80-C

Maximum Recurrent Peak Reverse Voltage

V_RRM

200

400

600

800

T_C=140°C

Average Rectified Output

(with heat sink)

Current @60HZ sine

T_A=29°C

I_O

wave, R-load

1.2

(without heat sink)

Peak Forward Surge Current @

60H_Zsine wave, 1 cycle, T_J=25°C

I_FSM

Maximum Peak Forward Voltage³

V_FM

1.05

Peak Reverse Current ²

I_RRM

μA

I²t Rating for Fusing @3ms≤t＜8.3ms,

T_J=25°C,Rating of per diode

I²t

A²s

Mounting Torque @ Recommend torque:5kg·cm

Dielectric Strength¹

TOR

Vdis

Kg‧cm

Typical Thermal Resistance (with heat sink)

Typical Thermal Resistance(without heat sink)

Operating and Storage temperature range

RθJC

1.5

°C/W

°C

RθJA

RθJL

T_J,T_STG

150, -55~150

Notes：

1. Terminals to case，AC 1 minute

_RM=V_RRM, Pulse measurement, Rating of per diode.

_FM=1A, Pulse measurement, Rating of per diode

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

25-Sep-2012 Rev. B

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