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S29XS256RABBHI000

更新时间： 2024-01-03 14:46:03
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 内存集成电路
页数 文件大小 规格书
72页 2210K
描述
Flash, 32MX8, 80ns, PBGA44, 7.70 X 6.20 MM, 1 MM HEIGHT, HALOGEN FREE AND LEAD FREE, FBGA-44

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S29XS256RABBHI000 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：VFBGA,Reach Compliance Code：compliant
ECCN代码：3A991.B.1.AHTS代码：8542.32.00.51
风险等级：5.24最长访问时间：80 ns
其他特性：TOP BOOT BLOCK启动块：TOP
JESD-30 代码：R-PBGA-B44长度：7.7 mm
内存密度：268435456 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
端子数量：44字数：33554432 words
字数代码：32000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：32MX8封装主体材料：PLASTIC/EPOXY
封装代码：VFBGA封装形状：RECTANGULAR
封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH并行/串行：PARALLEL
编程电压：1.8 V认证状态：Not Qualified
座面最大高度：1 mm最大供电电压 (Vsup)：1.95 V
最小供电电压 (Vsup)：1.7 V标称供电电压 (Vsup)：1.8 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：BALL
端子节距：0.5 mm端子位置：BOTTOM
宽度：6.2 mmBase Number Matches：1

S29XS256RABBHI000 数据手册

 浏览型号S29XS256RABBHI000的Datasheet PDF文件第1页浏览型号S29XS256RABBHI000的Datasheet PDF文件第2页浏览型号S29XS256RABBHI000的Datasheet PDF文件第4页浏览型号S29XS256RABBHI000的Datasheet PDF文件第5页浏览型号S29XS256RABBHI000的Datasheet PDF文件第6页浏览型号S29XS256RABBHI000的Datasheet PDF文件第7页 
S29VS/XS-R MirrorBit® Flash Family  
S29VS256R, S29VS128R, S29XS256R, S29XS128R  
256/128 Megabit (32/16 Megabyte)  
1.8 V Burst 16-bit Data Bus, Simultaneous Read/Write,  
Multiplexed MirrorBit Flash Memory  
Data Sheet (Advance Information)  
Features  
Single 1.8 V supply for read/program/erase (1.70–1.95 V)  
65 nm MirrorBit Technology  
10-year data retention (typical)  
Cycling Endurance: 100,000 cycles per sector (typical)  
RDY output indicates data available to system  
Command set compatible with JEDEC (42.4) standard  
Hardware sector protection via VPP pin  
Address and Data Interface Options  
– Address and Data Multiplexed for reduced I/O count  
(ADM) S29VS-R  
– Address-High, Address-Low, Data Multiplexed for minimum I/O  
count (AADM) S29XS-R  
Handshaking by monitoring RDY  
Offered Packages  
Simultaneous Read/Write operation  
32-word Write Buffer  
– 44-ball FBGA (6.2 mm x 7.7 mm x 1.0 mm)  
Low VCC write inhibit  
Bank architecture  
Write operation status bits indicate program and erase  
– Eight-bank  
operation completion  
Four 32-KB sectors at the top or bottom of memory array  
Suspend and Resume commands for Program and Erase  
255/127 of 128-KB sectors  
operations  
Programmable linear (8/16-word) with wrap around and  
Asynchronous program operation, independent of burst  
continuous burst read modes  
control register settings  
Secured Silicon Sector region consisting of 128 words each  
VPP input pin to reduce factory programming time  
Support for Common Flash Interface (CFI)  
for factory and customer  
General Description  
The Spansion S29VS256/128R and S29XS256/128R are MirrorBit® Flash products fabricated on 65 nm process technology.  
These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two  
separate banks using multiplexed data and address pins. These products can operate up to 108 MHz and use a single VCC of  
1.7 V to 1.95 V that makes them ideal for the demanding wireless applications of today that require higher density, better  
performance, and lowered power consumption. The S29VS256/128R operates in ADM mode, while the S29XS256/128R can  
operate in the AADM mode.  
Performance Characteristics  
Read Access Times  
Current Consumption (typical values)  
Continuous Burst Read @ 108 MHz  
Speed Option (MHz)  
108  
72.34  
6.75  
80  
32 mA  
71 mA  
30 mA  
30 µA  
Max. Synch. Latency, ns (t  
Simultaneous Operation @ 108 MHz  
Program/Erase  
IA)  
Max. Synch. Burst Access, ns (t  
BACC)  
Max. Asynch. Access Time, ns (t  
)
Standby Mode  
ACC  
Max OE# Access Time, ns (t  
)
15  
OE  
Typical Program & Erase Times  
Single Word Programming  
Effective Write Buffer Programming (V ) Per Word  
170 µs  
14.1 µs  
9 µs  
CC  
Effective Write Buffer Programming (V ) Per Word  
PP  
Sector Erase (16 Kword Sector)  
Sector Erase (64 Kword Sector)  
350 ms  
800 ms  
Publication Number S29VS_XS-R_00  
Revision 06  
Issue Date July 22, 2010  
This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. Do not design in  
this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed product without notice.  
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S29XS256RABBHW010 CYPRESS

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