Datasheet > S29WS064J1ABFI00

S29WS064J1ABFI00

更新时间： 2023-01-03 07:35:43

品牌	Logo	应用领域
飞索 - SPANSION		/
页数	文件大小	规格书
110页	2013K
描述
Flash, 4MX16, 45ns, PBGA80, 7 X 9 MM, LEAD FREE, FBGA-80

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S29WS064J1ABFI00 数据手册

S29WS128J/064J

128/64 Megabit (8/4 M x 16-Bit)

CMOS 1.8 Volt-only Simultaneous Read/Write,

Burst Mode Flash Memory

ADVANCE

INFORMATION

Distinctive Characteristics

Architectural Advantages

Performance Charcteristics

Single 1.8 volt read, program and erase (1.65 to

1.95 volt)

Read access times at 104/80/66 MHz

— Burst access times of 7.0/9.1/11.2 ns @ 30 pF at

industrial temperature range

Manufactured on 0.11 µm process technology

— Synchronous latency of 45.5/46/56 ns (at 30 pF)

VersatileIO™ (V_IO) Feature

— Asynchronous random access times of 45/45/55 ns

(at 30 pF)

Power dissipation (typical values, C_L= 30 pF)

— Burst Mode Read: 10 mA @ 80Mhz

— Simultaneous Operation: 25 mA @ 80Mhz

— Program/Erase: 15 mA

— Device generates data output voltages and tolerates

data input voltages as determined by the voltage on

the V_IOpin

— 1.8V compatible I/O signals (1.65-1.95 V)

— 1.5V compatible I/O signals (1.35-1.70 V)

Simultaneous Read/Write operation

— Standby mode: 0.2 µA

— Data can be continuously read from one bank while

executing erase/program functions in other bank

— Zero latency between read and write operations

— Four bank architecture: WS128J: 16Mb/48Mb/48Mb/

16Mb, WS064J: 8Mb/24Mb/24Mb/8Mb

Hardware Features

Handshaking feature available

— Provides host system with minimum possible latency

by monitoring RDY

Programable Burst Interface

Hardware reset input (RESET#)

— Hardware method to reset the device for reading

array data

— 2 Modes of Burst Read Operation

— Linear Burst: 8, 16, and 32 words with wrap-around

— Continuous Sequential Burst

WP# input

SecSi™ (Secured Silicon) Sector region

— 128 words accessible through a command sequence,

64words for the Factory SecSi™ Sector and 64words

for the Customer SecSi™ Sector.

Sector Architecture

4 Kword x 16 boot sectors, eight at the top of the address

range, and eight at the bottom of the address range

— Write protect (WP#) function allows protection of

four outermost boot sectors, regardless of sector

protect status

Persistent Sector Protection

— A command sector protection method to lock

combinations of individual sectors and sector groups

to prevent program or erase operations within that

sector

— WS128J: 4 Kword X 16, 32 Kword x 254 sectors

Bank A : 4 Kword x 8, 32 Kword x 31 sectors

— Sectors can be locked and unlocked in-system at V_CC

level

Bank B : 32 Kword x 96 sectors

Bank C : 32 Kword x 96 sectors

Password Sector Protection

— A sophisticated sector protection method to lock

combinations of individual sectors and sector groups

to prevent program or erase operations within that

sector using a user-defined 64-bit password

Bank D : 4 Kword x 8, 32 Kword x 31 sectors

— WS064J: 4 Kword x 16, 32 Kword x 126 sectors.

Bank A : 4 Kword x 8, 32 Kword x 15 sectors

Bank B : 32 Kword x 48 sectors

ACC input: Acceleration function reduces

programming time; all sectors locked when ACC =

V_IL

Bank C : 32 Kword x 48 sectors

Bank D : 4 Kword x 8, 32 Kword x 15 sectors

CMOS compatible inputs, CMOS compatible outputs

Low V_CCwrite inhibit

WS128J : 84-ball (8 mm x 11.6 mm) FBGA package,

WS064J : 80-ball (7 mm x 9 mm) FBGA package

Cyclling Endurance : 1,000,000 cycles per sector

typical

Data retention : 20-years typical

Publication Number WS128J/064J_00 Revision A Amendment 1 Issue Date October 6, 2004

This document contains information on a product under development at Spansion, LLC. The information is intended to help you evaluate this product. Do not design in

this product without contacting the factory. Spansion reserves the right to change or discontinue work on this proposed product without notice.

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与S29WS064J1ABFI00相关器件

型号	品牌	获取价格	描述	数据表
S29WS064N	SPANSION	获取价格	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS064N0LBAI010	SPANSION	获取价格	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS064N0LBAI011	SPANSION	获取价格	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS064N0LBAI012	SPANSION	获取价格	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS064N0LBAI013	SPANSION	获取价格	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS064N0LBAI110	SPANSION	获取价格	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS064N0LBAI111	SPANSION	获取价格	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS064N0LBAI112	SPANSION	获取价格	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS064N0LBAI113	SPANSION	获取价格	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS064N0LBAW010	SPANSION	获取价格	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY

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