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S29GL256N10FAIV13

更新时间： 2024-01-31 14:05:21
品牌 Logo 应用领域
飞索 - SPANSION 闪存
页数 文件大小 规格书
110页 1430K
描述
MirrorBit Flash Family

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S29GL256N10FAIV13 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：BGA, BGA64,8X8,40Reach Compliance Code：unknown
风险等级：5.92最长访问时间：100 ns
备用内存宽度：8命令用户界面：YES
通用闪存接口：YES数据轮询：YES
JESD-30 代码：S-PBGA-B64内存密度：268435456 bit
内存集成电路类型：FLASH内存宽度：16
部门数/规模：256端子数量：64
字数：16777216 words字数代码：16000000
最高工作温度：85 °C最低工作温度：-40 °C
组织：16MX16封装主体材料：PLASTIC/EPOXY
封装代码：BGA封装等效代码：BGA64,8X8,40
封装形状：SQUARE封装形式：GRID ARRAY
页面大小：8/16 words并行/串行：PARALLEL
电源：1.8,3/3.3 V认证状态：Not Qualified
就绪/忙碌：YES部门规模：128K
最大待机电流：0.000005 A子类别：Flash Memories
最大压摆率：0.07 mA表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：BALL端子节距：1 mm
端子位置：BOTTOM切换位：YES
类型：NOR TYPE

S29GL256N10FAIV13 数据手册

 浏览型号S29GL256N10FAIV13的Datasheet PDF文件第2页浏览型号S29GL256N10FAIV13的Datasheet PDF文件第3页浏览型号S29GL256N10FAIV13的Datasheet PDF文件第4页浏览型号S29GL256N10FAIV13的Datasheet PDF文件第5页浏览型号S29GL256N10FAIV13的Datasheet PDF文件第6页浏览型号S29GL256N10FAIV13的Datasheet PDF文件第7页 
S29GLxxxN MirrorBitTM Flash Family  
S29GL512N, S29GL256N, S29GL128N  
512 Megabit, 256 Megabit, and 128 Megabit,  
3.0 Volt-only Page Mode Flash Memory featuring  
110 nm MirrorBit process technology  
ADVANCE  
INFORMATION  
Datasheet  
Distinctive Characteristics  
Architectural Advantages  
Software & Hardware Features  
„
„
Single power supply operation  
— 3 volt read, erase, and program operations  
„
Software features  
— Program Suspend & Resume: read other sectors  
before programming operation is completed  
— Erase Suspend & Resume: read/program other  
sectors before an erase operation is completed  
— Data# polling & toggle bits provide status  
— Unlock Bypass Program command reduces overall  
multiple-word or byte programming time  
— CFI (Common Flash Interface) compliant: allows host  
system to identify and accommodate multiple flash  
devices  
Enhanced VersatileI/O™ control  
— All input levels (address, control, and DQ input levels)  
and outputs are determined by voltage on V input.  
IO  
V
range is 1.65 to V  
IO  
CC  
„
„
Manufactured on 110 nm MirrorBit process  
technology  
SecSi™ (Secured Silicon) Sector region  
— 128-word/256-byte sector for permanent, secure  
identification through an 8-word/16-byte random  
Electronic Serial Number, accessible through a  
command sequence  
„
Hardware features  
— Advanced Sector Protection  
— WP#/ACC input accelerates programming time  
(when high voltage is applied) for greater throughput  
during system production. Protects first or last sector  
regardless of sector protection settings  
— Hardware reset input (RESET#) resets device  
— Ready/Busy# output (RY/BY#) detects program or  
erase cycle completion  
— May be programmed and locked at the factory or by  
the customer  
„
Flexible sector architecture  
— S29GL512N: Five hundred twelve 64 Kword (128  
Kbyte) sectors  
— S29GL256N: Two hundred fifty-six 64 Kword (128  
Kbyte) sectors  
— S29GL128N: One hundred twenty-eight 64 Kword  
(128 Kbyte) sectors  
„
Compatibility with JEDEC standards  
— Provides pinout and software compatibility for single-  
power supply flash, and superior inadvertent write  
protection  
„
„
100,000 erase cycles per sector typical  
20-year data retention typical  
Performance Characteristics  
„
High performance  
— 80 ns access time (S29GL128N, S29GL256N),  
90 ns access time (S29GL512N)  
— 8-word/16-byte page read buffer  
— 25 ns page read times  
— 16-word/32-byte write buffer reduces overall  
programming time for multiple-word updates  
Low power consumption (typical values at 3.0 V, 5  
MHz)  
— 25 mA typical active read current;  
— 50 mA typical erase/program current  
— 1 µA typical standby mode current  
„
„
Package options  
— 56-pin TSOP  
— 64-ball Fortified BGA  
Publication Number 27631 Revision A Amendment 4 Issue Date May 13, 2004  
This document contains information on a product under development at FASL LLC. The information is intended to help you evaluate this product. FASL LLC reserves the  
right to change or discontinue work on this proposed product without notice.  
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