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S29GL256N10RFI03 PDF预览

S29GL256N10RFI03

更新时间： 2023-05-15 00:00:00
品牌 Logo 应用领域
飞索 - SPANSION 光电二极管存储闪存
页数 文件大小 规格书
126页 2869K
描述
Flash, 16MX16, 100ns, PDSO56, REVERSE, MO-142EC, TSOP-56

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S29GL256N10RFI03 技术参数

生命周期：Obsolete零件包装代码：TSOP1
包装说明：MO-142EC, TSOP-56针数：56
Reach Compliance Code：unknownECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51风险等级：5.64
Is Samacsys：N最长访问时间：80 ns
备用内存宽度：8启动块：BOTTOM/TOP
JESD-30 代码：R-PDSO-G56JESD-609代码：e3
长度：18.4 mm内存密度：134217728 bit
内存集成电路类型：FLASH内存宽度：16
湿度敏感等级：3功能数量：1
端子数量：56字数：8388608 words
字数代码：8000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：8MX16封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：240编程电压：3 V
认证状态：Not Qualified座面最大高度：1.2 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：TIN端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：30类型：NOR TYPE
宽度：14 mmBase Number Matches：1

S29GL256N10RFI03 数据手册

 浏览型号S29GL256N10RFI03的Datasheet PDF文件第2页浏览型号S29GL256N10RFI03的Datasheet PDF文件第3页浏览型号S29GL256N10RFI03的Datasheet PDF文件第4页浏览型号S29GL256N10RFI03的Datasheet PDF文件第5页浏览型号S29GL256N10RFI03的Datasheet PDF文件第6页浏览型号S29GL256N10RFI03的Datasheet PDF文件第7页 
S29GLxxxN MirrorBitTM Flash Family  
S29GL512N, S29GL256N, S29GL128N  
512 Megabit, 256 Megabit, and 128 Megabit,  
3.0 Volt-only Page Mode Flash Memory featuring  
110 nm MirrorBit process technology  
ADVANCE  
INFORMATION  
Datasheet  
Distinctive Characteristics  
— 56-pin TSOP/RTSOP  
— 64-ball Fortified BGA  
Architectural Advantages  
„
„
Single power supply operation  
— 3 volt read, erase, and program operations  
Software & Hardware Features  
Enhanced VersatileI/O™ control  
„
Software features  
— All input levels (address, control, and DQ input levels)  
and outputs are determined by voltage on VIO input.  
— Program Suspend & Resume: read other sectors  
before programming operation is completed  
— Erase Suspend & Resume: read/program other  
sectors before an erase operation is completed  
— Data# polling & toggle bits provide status  
— Unlock Bypass Program command reduces overall  
multiple-word or byte programming time  
— CFI (Common Flash Interface) compliant: allows host  
system to identify and accommodate multiple flash  
devices  
V
IO range is 1.65 to VCC  
„
„
Manufactured on 110 nm MirrorBit process  
technology  
SecSi™ (Secured Silicon) Sector region  
— 128-word/256-byte sector for permanent, secure  
identification through an 8-word/16-byte random  
Electronic Serial Number, accessible through a  
command sequence  
— May be programmed and locked at the factory or by  
the customer  
„
Hardware features  
— Advanced Sector Protection  
„
Flexible sector architecture  
— S29GL512N: Five hundred twelve 64 Kword (128  
Kbyte) sectors  
— WP#/ACC input accelerates programming time  
(when high voltage is applied) for greater throughput  
during system production. Protects first or last sector  
regardless of sector protection settings  
— Hardware reset input (RESET#) resets device  
— Ready/Busy# output (RY/BY#) detects program or  
erase cycle completion  
— S29GL256N: Two hundred fifty-six 64 Kword (128  
Kbyte) sectors  
— S29GL128N: One hundred twenty-eight 64 Kword  
(128 Kbyte) sectors  
„
Compatibility with JEDEC standards  
— Provides pinout and software compatibility for single-  
power supply flash, and superior inadvertent write  
protection  
„
„
100,000 erase cycles per sector  
20-year data retention  
Performance Characteristics  
„
High performance  
— 80 ns access time (S29GL128N, S29GL256N),  
90 ns access time (S29GL512N)  
— 8-word/16-byte page read buffer  
— 16-word/32-byte write buffer  
— 25 ns page read times  
— 16-word/32-byte write buffer reduces overall  
programming time for multiple-word updates  
Low power consumption (typical values at 3.0 V, 5  
MHz)  
— 30 mA typical interpage active read current;  
10 mA typical intrapage active read current  
— 50 mA typical erase/program current  
— 1 µA typical standby mode current  
„
„
Package options  
Publication Number 27631 Revision A Amendment 1 Issue Date October 16, 2003  
This document contains information on a product under development at FASL LLC. The information is intended to help you evaluate this product. FASL LLC reserves the  
right to change or discontinue work on this proposed product without notice.  
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S29GL256N10TAI010 SPANSION

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S29GL256N10TAI012 SPANSION

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S29GL256N10TAI013 SPANSION

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 		MirrorBit Flash Family
S29GL256N10TAI020 SPANSION

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 		MirrorBit Flash Family
S29GL256N10TAI022 SPANSION

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S29GL256N10TAI023 SPANSION

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 		MirrorBit Flash Family
S29GL256N10TAI10 SPANSION

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 		Flash, 16MX16, 100ns, PDSO56, MO-142EC, TSOP-56
S29GL256N10TAI20 SPANSION

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 		Flash, 16MX16, 100ns, PDSO56, MO-142EC, TSOP-56
S29GL256N10TAIV10 SPANSION

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 		MirrorBit Flash Family
S29GL256N10TAIV12 SPANSION

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 		3.0 Volt-only Page Mode Flash Memory featurin

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