Datasheet > S29GL128P90TFIR13

S29GL128P90TFIR13

更新时间： 2023-09-03 20:26:32

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S29GL128P90TFIR13 数据手册

S29GL01GP

S29GL512P

S29GL256P

S29GL128P

Current Consumption (typical values)

Random Access Read (f = 5 MHz)

8-Word Page Read (f = 10 MHz)

Program/Erase

30 mA

1 mA

50 mA

1 µA

Standby

Program & Erase Times (typical values)

Single Word Programming

60 µs

15 µs

13.5 µs

0.5 s

Effective Write Buffer Programming (V_CC) Per Word

Effective Write Buffer Programming (V_HH) Per Word

Sector Erase Time (64 Kword Sector)

Document Number: 002-00886 Rev. *B

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型号	品牌	获取价格	描述	数据表
S29GL128P90TFIR20	SPANSION	获取价格	Flash, 128MX1, 90ns, PDSO56, 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
S29GL128P90TFIR20	CYPRESS	获取价格	Flash, 128MX1, 90ns, PDSO56, TSOP-56
S29GL128P90TFIR20	INFINEON	获取价格	High Performance Page Mode
S29GL128P90TFIR23	INFINEON	获取价格	High Performance Page Mode
S29GL128P90TFIV10	SPANSION	获取价格	3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P90TFIV12	SPANSION	获取价格	3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128S	SPANSION	获取价格	GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family
S29GL128S10DHB010	INFINEON	获取价格	High Performance Page Mode
S29GL128S10DHB013	INFINEON	获取价格	High Performance Page Mode
S29GL128S10DHB020	INFINEON	获取价格	High Performance Page Mode