S29CD032J
S29CD016J
S29CL032J
S29CL016J
Document Title: S29CD032J, S29CD016J, S29CL032J, S29CL016J, 32/16 Mbit, 2.6/3.3 V, Dual Boot, Simultaneous Read/
Write, Burst Flash
Document Number: 002-00948
Orig. of
Change
Submission
Date
Rev.
ECN No.
Description of Change
Asynchronous Command Write Timing In figure, changed tOEH to tWEH; changed
tWPH to tOEP.
Synchronous Command Write/Read Timing
Removed tWADVH and tWCKS from figure.
WP# Timing In figure, changed tCH to tBUSY
Erase/Program Operations
01/20/2006
In table, added Note 3: Program/Erase parameters are the same regardless of syn-
chronous or
asynchronous mode. Added tOEP (OE# High Pulse)
Alternative CE# Controlled Erase/Program Operations
Removed tOES from table. Added tWADVS and tWCKS
Appendix 2: Command Definitions Removed “or when device is in autoselect mode”
from Note 14.
Global Changed document status to Preliminary.
Distinctive Characteristics Changed cycling endurance from typical to guaranteed.
Performance Characteristics Updated Max Asynch. Access Time, Max CE# Access
Time, and Max OE# Access time in table.
Ordering Information Updated additional ordering options in designator breakout table.
Updated valid combination tables.
Input/Output Descriptions and Logic Symbols
Changed RY/BY# description.
Physical Dimensions/Connection Diagrams
Changed note on connection diagrams.
Additional Resources Updated contact information.
Hardware Reset (RESET#) Added section.
Autoselect Updated third and fourth paragraphs in section. Updated Autoselect Codes
table.
Erase Suspend / Erase Resume Commands
**
-
RYSU
Modified second paragraph. Replaced allowable operations table with bulleted list.
Program Suspend / Program Resume Commands
Replaced allowable operations table with bulleted list.
Reset Command Added section.
06/12/2006
Secured Silicon Sector Flash Memory Region
Modified Secured Silicon Sector Addresses table.
Absolute Maximum Ratings Modified VCC and VIO ratings. Modified Note 1.
Operating Ranges Modified specification titles and descriptions (no specification value
changes).
DC Characteristics, CMOS Compatible table
Modified ICCB specification. Deleted Note 5. Added Note 3 references to table.
Burst Mode Read for 32 Mb and 16 Mb table
Modified tADVCS, tCLKH, tCLKL, tAAVS specifications. Added tRSTZ, tWADVH1, and
tWADVH2 specifications. Added Notes 2 and 3, and note references to table.
Synchronous Command Write/Read Timing figure
Added tWADVH1 and tWADVH2 to figure. Deleted tACS and tACH from figure.
Hardware Reset (RESET#) Added table to section.
Erase/Program Operations table Added note references. Deleted tOEP specification.
Erase and Programming Performance Changed Double Word Program Time specifi-
cation.
Common Flash Memory Interface (CFI)
CFI System Interface String table: Changed description and data for addresses 1Bh
and 1Ch.
06/12/2006
Device Geometry Definition table: Changed description and data for address 27h.
Document Number: 002-00948 Rev. *C
Page 70 of 74
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