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S10M-T3 PDF预览

S10M-T3

更新时间: 2024-11-23 19:36:39
品牌 Logo 应用领域
WTE 瞄准线光电二极管
页数 文件大小 规格书
4页 40K
描述
Rectifier Diode, 1 Phase, 1 Element, 10A, 1000V V(RRM), Silicon, DO-214AB, SMC, 2 PIN

S10M-T3 数据手册

 浏览型号S10M-T3的Datasheet PDF文件第2页浏览型号S10M-T3的Datasheet PDF文件第3页浏览型号S10M-T3的Datasheet PDF文件第4页 
®
S10A – S10M  
10A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE  
WON-TOP ELECTRONICS  
Features  
Glass Passivated Die Construction  
Ideally Suited for Automatic Assembly  
Low Forward Voltage Drop  
Surge Overload Rating to 200A Peak  
Low Power Loss  
Built-in Strain Relief  
Plastic Case Material has UL Flammability  
Classification Rating 94V-0  
B
D
A
F
C
H
G
E
SMC/DO-214AB  
Min  
Mechanical Data  
Dim  
A
Max  
6.22  
7.11  
Case: SMC/DO-214AB, Molded Plastic  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
5.59  
B
6.60  
C
2.75  
3.25  
0.305  
8.13  
2.62  
0.203  
1.27  
Polarity: Cathode Band or Cathode Notch  
Marking: Type Number  
Weight: 0.21 grams (approx.)  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
D
0.152  
7.75  
E
F
2.00  
G
H
0.051  
0.76  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
S10A S10B S10D S10G S10J S10K S10M Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
10  
V
A
Average Rectified Output Current  
@TL = 75°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
200  
1.2  
A
V
Forward Voltage  
@IF = 10A  
VFM  
IRM  
Peak Reverse Current  
@TA = 25°C  
10  
250  
µA  
At Rated DC Blocking Voltage  
@TA = 125°C  
Typical Junction Capacitance (Note 1)  
Typical Thermal Resistance (Note 2)  
CJ  
40  
8.0  
pF  
°C/W  
°C  
RθJL  
Operating and Storage Temperature Range  
TJ, TSTG  
-65 to +150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
2. Mounted on PCB with 8.0mm x 8.0mm copper pads.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

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外壳的方向特性可防止反向接触插入。*带有两个或四个电路的外壳具有锁定机构。此功能提供极化并