Datasheet > S-8261AAOMD-G2O-T2

S-8261AAOMD-G2O-T2

更新时间： 2024-11-23 22:05:15

品牌	Logo	应用领域
精工 - SII		电池光电二极管
页数	文件大小	规格书
36页	706K
描述
BATTERY PROTECTION IC FOR SINGLE-CELL PACK

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

S-8261AAOMD-G2O-T2 数据手册

浏览型号S-8261AAOMD-G2O-T2的Datasheet PDF文件第2页

浏览型号S-8261AAOMD-G2O-T2的Datasheet PDF文件第3页

浏览型号S-8261AAOMD-G2O-T2的Datasheet PDF文件第4页

浏览型号S-8261AAOMD-G2O-T2的Datasheet PDF文件第5页

浏览型号S-8261AAOMD-G2O-T2的Datasheet PDF文件第6页

浏览型号S-8261AAOMD-G2O-T2的Datasheet PDF文件第7页

Rev.1.9_00

BATTERY PROTECTION IC FOR SINGLE-CELL PACK

S-8261 Series

The S-8261 series are lithium-ion / lithium polymer

rechargeable battery protection ICs incorporating high-

accuracy voltage detection circuit and delay circuit.

The S-8261 series are suitable for protection of single-cell

lithium ion/lithium polymer battery packs from overcharge,

overdischarge and overcurrent.

Features

(1) Internal high accuracy voltage detection circuit

• Overcharge detection voltage

3.9 V to 4.4 V (applicable in 5 mV step)

Accuracy: 25 mV (+25 °C) and 30 mV (−5 °C to +55 °C)

• Overcharge hysteresis voltage

0.0 V to 0.4 V^*1Accuracy: 25 mV

The overcharge hysteresis voltage can be selected from the range 0.0 V to 0.4 V in 50 mV step.

• Overdischarge detection voltage

2.0 V to 3.0 V (applicable in 10 mV step) Accuracy: 50 mV

• Overdischarge hysteresis voltage 0.0 V to 0.7 V^*2Accuracy: 50 mV

The overdischarge hysteresis voltage can be selected from the range 0.0 V to 0.7 V in 100 mV step.

• Overcurrent 1 detection voltage

• Overcurrent 2 detection voltage

0.05 V to 0.3 V (applicable in 10 mV step) Accuracy: 15 mV

0.5 V (fixed) Accuracy: 100 mV

(2) High voltage device is used for charger connection pins

(VM and CO pins: absolute maximum rating = 28 V)

(3) Delay times (overcharge: t_CU, overdischarge: t_DL, overcurrent 1: t_lOV1, overcurrent 2: t_lOV2) are generated

by an internal circuit. No external capacitor is necessary.

(4) Three-step overcurrent detection circuit is included.

Accuracy: 20%

(overcurrent 1, overcurrent 2 and load short-circuiting)

(5) 0 V battery charge function “available” / “unavailable” are selectable.

(6) Charger detection function and abnormal charge current detection function

• The overdischarge hysteresis is released by detecting negative voltage at the VM pin (−0.7 V typ.).

(Charger detection function)

• When the output voltage of the DO pin is high and the voltage at the VM pin is equal to or lower than

the charger detection voltage (−0.7 V typ.), the output voltage of the CO pin goes low. (Abnormal

charge current detection function)

(7) Low current consumption

• Operation mode

3.5 µA typ., 7.0 µA max.

0.1 µA max.

• Power-down mode

(8) Wide operating temperature range −40 °C to +85 °C

(9) Small package SOT-23-6, 6-Pin SNB(B)

*1. Overcharge release voltage = Overcharge detection voltage − Overcharge hysteresis voltage

(where overcharge release voltage < 3.8 V is prohibited.)

*2. Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis voltage

(where overdischarge release voltage > 3.4 V is prohibited.)

Applications

• Lithium-ion rechargeable battery packs

• Lithium polymer rechargeable battery packs

Seiko Instruments Inc.

12 3 4 5 6 7...36

中文翻译

下载PDF

与S-8261AAOMD-G2O-T2相关器件

型号	品牌	获取价格	描述	数据表
S-8261AAOMD-G2OT2X	ABLIC	获取价格	BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261AAPMD-G2P-T2	SII	获取价格	BATTERY PROTECTION IC FOR SINGLE-CELL PACK
S-8261AAPMD-G2PT2X	ABLIC	获取价格	BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261AARBD-G2R-TF	SII	获取价格	BATTERY PROTECTION IC FOR SINGLE-CELL PACK
S-8261AARMD-G2R-T2	SII	获取价格	BATTERY PROTECTION IC FOR SINGLE-CELL PACK
S-8261AARMD-G2RT2X	ABLIC	获取价格	BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261AASMD-G2S-T2	SII	获取价格	BATTERY PROTECTION IC FOR SINGLE-CELL PACK
S-8261AASMD-G2ST2X	ABLIC	获取价格	BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261AATMD-G2TT2X	ABLIC	获取价格	BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261AAUMD-G2U-T2	SII	获取价格	BATTERY PROTECTION IC FOR SINGLE-CELL PACK

与S-8261AAOMD-G2O-T2相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

S-8261AAOMD-G2O-T2

S-8261AAOMD-G2O-T2 数据手册

与S-8261AAOMD-G2O-T2相关器件

与S-8261AAOMD-G2O-T2相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

S-8261AAOMD-G2O-T2

S-8261AAOMD-G2O-T2 数据手册

与S-8261AAOMD-G2O-T2相关器件

与S-8261AAOMD-G2O-T2相关文章

您还可以找

您在本页遇到什么问题？