RUM003N02
Transistor
1.8V Drive Nch MOSFET
RUM003N02
zDimensions (Unit : mm)
zStructure
Silicon N-channel
MOSFET
VMT3
zApplications
Switching
(1)Base(IN)(Gate)
zFeatures
1) Low on-resistance.
(2)Emitter(GND)(Source)
(3)Collector(OUT)(Drain)
Abbreviated symbol : QT
2) Fast switching speed.
3) Low voltage drive (1.8V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
zPackaging specifications
zEquivalent circuit
Drain
Package
Code
Taping
T2L
Type
Basic ordering unit
(pieces)
8000
RUM003N02
Gate
∗2
zAbsolute maximum ratings (Ta=25°C)
∗1
Parameter
Drain-source voltage
Gate-source voltage
Symbol
Limits
Unit
V
Source
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
VDSS
GSS
20
8
V
V
Continuous
Pulsed
I
D
300
mA
mA
mW
°C
Drain current
1
∗
I
DP
600
2
∗
Total power dissipation
Channel temperature
P
D
150
Tch
150
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
zThermal resistance
Parameter
Symbol
Rth(ch-a) ∗
Limits
833
Unit
Channel to ambient
∗ Each terminal mounted on a recommended land
°C / W
Rev.B
1/3