Datasheet > RUP15010-10

RUP15010-10

更新时间： 2024-09-23 06:08:55

品牌	Logo	应用领域
RFHIC		放大器
页数	文件大小	规格书
4页	163K
描述
GaN-SiC Broadband Amplifier

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RUP15010-10 数据手册

Preliminary

GaN-SiC Broadband Amplifier

RUP15010-10

Product Features

Application

• Solid-state linear amplifier design

• Broadband communication

• GaN on SiC HEMT

• Broadcasting

• Small and light weight

• General purpose RF amplifier

• Linear applications in the L/S

Frequency Bands

• Wide Band Operation 500~2500MHz

• 50 Ohm Input/Output impedance matched

• Highly reliable and rugged design

• Harsh environmental condition

• High efficiency

• 10W typical Psat

Description

The RUP15010-10 is designed for RF system application frequencies from 500MHz to 2.5GHz.

This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, wide

bandwidth and high efficiency.

Electrical Specifications @ VDD=+28VDC, T=25°C, 50Ω System

PARAMETER

Frequency Range

Symbol

Min

Typ

Max

Unit

MHz

Watt

Psat

P_3dB

SSG

ΔG

500

2500

Output Power CW

Output Power @ P3dB G.C.P

Small Signal Gain

± 1.5

± 2.0

8.5 : 1

-10

Small Signal Gain Flatness

Input VSWR

S11

dBc

Volt

Amp

Harmonics @ P1dB G.C.P

Spurious Signals

Spur

VDC

IDD

-70

-60

Operating Voltage

1.0

0.7

1.5

Supply Current @ P _sat

Supply Current @ P _3dB

1.0

* Please DO NOT ENTER RF INPUT POWER OVER +37dBm. (to prevent the main from damaging)

Environmental Characteristics

PARAMETER

Operating Case Temperature

Storage Temperature

Symbol

Min

Typ

Max

+70

Unit

°C

-40

+85

°C

Mechanical Specifications

PARAMETER

Value

Units

Limits

Max

55.0 x 30.0 x 16.0

SMA Female

Dimensions ( L x W x H )

RF Connectors In/Out

Cooling

External Heat sink + airflow

▪ Tel : 82-31-250-5011

▪ rfsales@rfhic.com

▪ All specifications may change without notice.

▪ Version 0.3

12 3 4

中文翻译

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