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RUR040N02 PDF预览

RUR040N02

更新时间: 2024-01-04 22:45:12
品牌 Logo 应用领域
VECTRON 驱动
页数 文件大小 规格书
5页 101K
描述
1.5V Drive Nch MOSFET

RUR040N02 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:TSMT3, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:1.8Samacsys Description:1.5V Drive Nch MOSFET: Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):4 A最大漏极电流 (ID):4 A
最大漏源导通电阻:0.046 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G3JESD-609代码:e1
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON

RUR040N02 数据手册

 浏览型号RUR040N02的Datasheet PDF文件第2页浏览型号RUR040N02的Datasheet PDF文件第3页浏览型号RUR040N02的Datasheet PDF文件第4页浏览型号RUR040N02的Datasheet PDF文件第5页 
RUR040N02  
Transistors  
1.5V Drive Nch MOSFET  
RUR040N02  
zDimensions (Unit : mm)  
zStructure  
Silicon N-channel  
MOSFET  
TSMT3  
zFeatures  
1) 1.5V drive  
2) Low On-resistance.  
3) Built-in G-S Protection Diode.  
4) Small Surface Mount Package (TSMT3).  
(1) Gate  
Each lead has same dimensions  
(2) Source  
(3) Drain  
Abbreviated symbol : XF  
zApplication  
Switching  
zEquivalent circuit  
zPackaging specifications  
(3)  
Package  
Taping  
TL  
Type  
Code  
Basic ordering unit (pieces)  
3000  
RUR040N02  
(1)  
2  
1  
(1) Gate  
(2)  
(2) Source  
(3) Drain  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Symbol  
Limits  
Unit  
VDSS  
VGSS  
ID  
20  
10  
V
V
Continuous  
Pulsed  
4.0  
A
Drain current  
1  
IDP  
8.0  
A
Source current  
(Body diode)  
Continuous  
Pulsed  
IS  
0.8  
A
1  
2  
ISP  
8.0  
A
Total power dissipation  
Channel temperature  
PD  
1.0  
W
°C  
°C  
Tch  
Tstg  
150  
Range of storage temperature  
1 Pw10µs, Duty cycle1%  
2 Mounted on a ceramic board  
55 to +150  
zThermal resistance  
Parameter  
Channel to ambient  
Symbol  
Rth (ch-a)∗  
Limits  
125  
Unit  
°C / W  
Mounted on a ceramic board  
1/4  

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