Datasheet > RT6551B

RT6551B

更新时间： 2024-11-21 19:53:19

品牌	Logo	应用领域
立锜 - RICHTEK		/
页数	文件大小	规格书
23页	284K
描述
暂无描述

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RT6551B 技术参数

Status：	Active	Vs (typ) (V)：	5
Vin (min) (V)：	4.5	Vin (max) (V)：	26
Vout (min) (V)：	0.675	Vout (max) (V)：	3.3
Preset Vout (V)：		Output Adj. Method：	Resistor
Accuracy (+/- %)：	1	Freq (typ) (kHz)：
Freq (min) (kHz)：		Freq (max) (kHz)：
Iq (typ) (mA)：	0.135	Features：	Adjustable Frequency;COT Control;Cycle-by-Cycle Current Limit;Diode Emulation Mode;Enable Input;Fast Transient Response;OVP;PSM;Power Good;Stable with Ceramic Capacitor;UVP
Package Type：	WQFN3x3-20

RT6551B 数据手册

RT6551A/B

Complete DDR Memory Power Supply Controller

General Description

The RT6551A/B provides a complete power supply for

DDR2/DDR3/DDR3L/LPDDR3/DDR4 memory systems. It

integrates a synchronous PWM Buck controller with a

1.5Asink/source tracking linear regulator and buffered low

noise reference.

RT6551A/B supports all of the sleep state controls placing

VTT at high-Z in S3 and discharging VDDQ, VTT and

VTTREF (soft-off) in S4/S5.

The RT6551A/B provides protections including OVP, UVP,

and thermal shutdown. The RT6551A/B is available in the

WQFN-20L 3x3 package.

The PWM controller provides the low quiescent current,

high efficiency, excellent transient response, and highDC

output accuracy needed for stepping down high-voltage

batteries to generate low-voltage chipset RAM supplies

in notebook computers. The constant on-time PWM

control scheme handles wide input/output voltage ratios

with ease and provides 100ns “instant-on” response to

load transients while maintaining a relatively constant

switching frequency.

Applications

 DDR2/DDR3/DDR3L/LPDDR3/DDR4 Memory Power

Supplies

 Notebook computers

 SSTL18, SSTL15 and HSTL bus termination

Pin Configurations

The RT6551A/B achieves high efficiency at a reduced cost

by eliminating the current-sense resistor found in

traditional current mode PWMs. Efficiency is further

enhanced by its ability to drive very large synchronous

rectifier MOSFETs. The Buck conversion allows this device

to directly step down high-voltage batteries for the highest

possible efficiency.

(TOP VIEW)

20 19 18 17 16

VTTGND

VTTSNS

GND

VTTREF

VDDQ

LGATE

PGND

VDD

VID

GND

9 10

The 1.5A sink/source LDO maintains fast transient

response only requiring a 10μF ceramic output capacitor.

In addition, the LDO supply input is available externally

to significantly reduce the total power losses. The

WQFN-20L 3x3

Simplified Application Circuit

VDD

TON

VDD

RT6551A/B

UGATE

BOOT

PGOOD

VTT

PHASE

LGATE

VDDQ

VTTSNS

VTTREF

VDDQ

VID

VLDOIN

GND

is a registered trademark of Richtek Technology Corporation.

DS6551A/B-00 May 2015

www.richtek.com

12 3 4 5 6 7...23

中文翻译

下载PDF

与RT6551B相关器件

型号	品牌	获取价格	描述	数据表
RT6575A	RICHTEK	获取价格	暂无描述
RT6575B	RICHTEK	获取价格	暂无描述
RT6575C	RICHTEK	获取价格	Dual-Channel Synchronous DC-DC Step-Down Controller with 5V/3.3V LDOs
RT6575D	RICHTEK	获取价格	暂无描述
RT6575E	RICHTEK	获取价格	暂无描述
RT6575K	RICHTEK	获取价格	High Efficiency Single Synchronous DC-DC Step-Down Controller with 5V LDO
RT6576A	RICHTEK	获取价格	暂无描述
RT6576B	RICHTEK	获取价格	暂无描述
RT6576C	RICHTEK	获取价格	暂无描述
RT6576D	RICHTEK	获取价格	暂无描述

与RT6551B相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

27
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

19
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

47

产品中心

服务支持

精选活动

关于我们

帮助中心

RT6551B

RT6551B 技术参数

RT6551B 数据手册

与RT6551B相关器件

与RT6551B相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RT6551B

RT6551B 技术参数

RT6551B 数据手册

与RT6551B相关器件

与RT6551B相关文章

您还可以找

您在本页遇到什么问题？