Datasheet > RT3T1CU

RT3T1CU

更新时间： 2024-02-12 03:37:17

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体晶体管
页数	文件大小	规格书
4页	171K
描述
Composite Transistor With Resistor

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中文翻译

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数据手册

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RT3T1CU 数据手册

RT3T1CU

Composite Transistor With Resistor

For Switching Application

Silicon Epitaxial Type

OUTLINE DRAWING

Unit：mm

DESCRIPTION

RT3T1CU is

1.6 ±0.05

1.2 ±0.05

composite transistor built with

RT1N141 chip and RT1P136 chip in USM6F package.

1pinﾏｰｸ

(0.5)

FEATURE

Silicon epitaxial type

0.5

(0.95)

Each transistor elements are independent.

Mini package for easy mounting

1.6

1. 0

±0.05

0.5

0.2 ±0.05

(0.5)

APPLICATION

Inverted circuit, switching circuit,

(Φ0.1～0.2)

interface circuit, driver circuit

0.12

±0.05

0.5

±0.05

※PNP built in transistor of ”－”sign is abbreviation.

TERMINAL

CONNECTOR

①：EMITTER1

②：BASE1

⑥

④

⑤

RTr1

③：COLLECTOR2

④：EMITTER2

⑤：BASE2

RTr2

⑥:COLLECTOR1

JEITA：－

ISAHAYA：USM6F

①

②

③

MAXIMUM RATING (Ta=25℃)

SYMBOL

PARAMETER

RATING

UNIT

MARKING

Collector to Base voltage

CBO

EBO

CEO

Tr1

Tr2

Emitter to Base voltage

Collector to Emitter voltage

Collector current

100

200

125

＋150

℃

Peak Collector current

Collector dissipation（Total, Ta=25℃）

Junction temperature

１

-55～＋150

℃

Storage temperature

stg

ISAHAYA ELECTRONICS CORPORATION

12 3 4

中文翻译

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