Datasheet > RT3U11M

RT3U11M

更新时间： 2024-09-21 03:29:43

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体晶体管
页数	文件大小	规格书
5页	169K
描述
Composite Transistor

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中文翻译

获取价格

数据手册

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RT3U11M 数据手册

PRELIMINARY

RT3U11M

Composite Transistor

For high speed switching

Silicon N-channel + P-channel MOSFET

DESCRIPTION

OUTLINE DRAWING

Unit：mm

RT3U11M is

composite transistor built with

INK0001AX and INJ0001AX chips in SC-88 package.

2.1

1.25

FEATURE

・Input impedance is high, and not necessary to consider a drive

①

②

③

⑥

electric current.

⑤

④

・Vth is low, and drive by low voltage is possible. Vth=0.6～1.2V

・Low on Resistance. Ron= 3.5 / 7Ω(Tr1/Tr2) TYP

・High speed switching.

・Small package for easy mounting.

APPLICATION

high speed switching , Analog switching

*P-channel MOSFET Tr2’s minus sign is omitted

TERMINAL

⑤

④

⑥

CONNECTOR

①：SOURCE1

②：GATE1

Tr.1

③：DRAIN2

④：SOURCE2

⑤：GATE2

⑥:DRAIN1

Tr.2

JEITA：SC-88

①

②

③

MAXIMUM RATING (Ta=25℃)

SYMBOL

PARAMETER

RATING

UNIT

MARKING

Drain-source voltage

DSS

Gate-source voltage

±8

GSS

Drain current

100

℃

Total power dissipation（Ta=25℃）

Channel temperature

150

＋125

-55～＋125

stg

１

Ｕ１

℃

Range of Storage temperature

１

ISAHAYA ELECTRONICS CORPORATION

12 3 4 5

中文翻译

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