Datasheet > RT3T55M

RT3T55M

更新时间： 2024-02-19 19:12:04

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体晶体管
页数	文件大小	规格书
4页	100K
描述
Composite Transistor With Resistor

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中文翻译

获取价格

数据手册

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RT3T55M 数据手册

PRELIMINARY

RT3T55M

Composite Transistor With Resistor

For Switching Application

Silicon Epitaxial Type

OUTLINE DRAWING

Unit：mm

DESCRIPTION

RT3T55M is

composite transistor built with

2.1

RT1N141 chip and RT1P431 chip in SC-88 package.

1.25

FEATURE

Silicon epitaxial type

①

②

③

⑥

⑤

④

Each transistor elements are independent.

Mini package for easy mounting

APPLICATION

Inverted circuit, switching circuit,

interface circuit, driver circuit

※PNP built in transistor of ”－”sign is abbreviation.

⑥

RTr1

④

⑤

TERMINAL

CONNECTOR

①：EMITTER1

②：BASE1

③：COLLECTOR2

④：EMITTER2

⑤：BASE2

RTr2

⑥:COLLECTOR1

JEITA：SC-88

①

②

③

MAXIMUM RATING (Ta=25℃)

UNI

SYMBOL

PARAMETER

RATING

MARKING

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

CBO

EBO

CEO

⑥ ⑤ ④

Tr1 10

Tr2 6

100

℃

T1 4

200

Peak Collector current

Collector dissipation（Total, Ta=25℃）

Junction temperature

150

＋150

-55～＋150

① ② ③

℃

Storage temperature

stg

ISAHAYA ELECTRONICS CORPORATION

12 3 4

中文翻译

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