Datasheet > RT3AMMAM1F

RT3AMMAM1F

更新时间： 2024-01-02 22:58:56

品牌	Logo	应用领域
谏早电子 - ISAHAYA		/
页数	文件大小	规格书
4页	168K
描述
Transistor

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技术参数
数据手册

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RT3AMMAM1F 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

RT3AMMAM1F 数据手册

PRELIMINARY

RT3AMMAM1

Composite Transistor

For Low Frequency Amplify Application

Silicon Pnp Epitaxial Type

TYPICAL CHARACTERISTICS (Tr1,r2.)

COMMON EMITTER OUTPUT

COMMON EMITTER TRANSFER

-50

IB=-0.18mA

IB=-0.16mA

IB=-0.20mA

-50

-40

-30

-20

-10

-0

IB=-0.14mA

VCE=-6V

IB=-0.12mA

IB=-0.10mA

-40

-30

-20

-10

-0

IB=-0.08mA

IB=-0.06mA

IB=-0.04mA

IB=-0.02mA

IB=0

-0

-1

-2

-3

-4

-5

-0.0

-0.2

-0.4

-0.6

-0.8

-1.0

COLLECTOR・EMITTER VOLTAGE VCE(V)

BASE TO EMITTER VOLTAGE VBE[V]

GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT

DC FORWARD CURRENT GAIN VS.

COLLECTOR CURRENT

400

300

200

100

1000

100

VCE=-6V

100(@IC=-1mA)

0.1

100

-0.1

-1

-10

-100

-1000

EMITTER CURRENT IE[mA]

COLLECTOR CURRENT IC[mA]

COLLECTOR OUTPUT CAPACITANCE

VS. COLLECTOR TO BASE VOLTAGE

100

-0.1

-1 -10

COLLECTOR TO BASE VOLTAGE VCB[V]

-100

ISAHAYA ELECTRONICS CORPORATION

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