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RT100KP170E3TR PDF预览

RT100KP170E3TR

更新时间: 2024-02-03 20:08:50
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
4页 138K
描述
Trans Voltage Suppressor Diode, 100000W, 170V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

RT100KP170E3TR 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.45
Is Samacsys:N最大击穿电压:231 V
最小击穿电压:189 V外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:100000 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:1.61 W认证状态:Not Qualified
最大重复峰值反向电压:170 V表面贴装:NO
技术:AVALANCHE端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

RT100KP170E3TR 数据手册

 浏览型号RT100KP170E3TR的Datasheet PDF文件第1页浏览型号RT100KP170E3TR的Datasheet PDF文件第2页浏览型号RT100KP170E3TR的Datasheet PDF文件第3页 
RT100KP33A thru RT100KP400CA, e3  
Preferred 100 kW Transient Voltage  
Suppressor for AIRCRAFT POWER  
BUS PROTECTION  
S C O T T S D A L E D I V I S I O N  
t
t – time  
t – time  
t - Time  
Note: frequency is 1MHz  
FIGURE 7 – Waveform 3  
FIGURE 8 – Waveform 4  
FIGURE 9 – Waveform 5A  
NOTE: The 1MHz damped oscillatory waveform (3) has an effective pulse width of 4 μs. Equivalent peak pulse power at each of the pulse widths represented in  
RTCA/DO-160E for waveforms 3, 4 and 5A (above) have been determined referencing Figure 1 herein as well as Application Notes 104 and 120 (found on  
Microsemi’s website) and are listed below.  
WAVEFORM  
NUMBER  
PULSE WIDTH  
PEAK PULSE  
POWER  
Peak Pulse Current  
Conversion Factor *  
from Rated IPP  
at 6.6/69 µs  
3.40x  
μs  
kW  
340  
100  
70  
3
4
5A  
4
6.4/69  
40/120  
1.00x  
0.70x  
* Multiply by the conversion factor shown with reference to the maximum rated IPP in the Electrical Characteristics Table on page 2.  
Note: High current fast rise-time transients of 250 ns or less can more than triple the VC from parasitic inductance effects (V= -Ldi/dt) compared to the  
clamping voltage shown in the initial Electrical Characteristics on page 1 as also described in Figures 5 and 6 herein.  
Also see MicroNotes 127, 130, and 132 on the Microsemi website (Support section) for further information on Transient  
Voltage Suppressors with reference to aircraft industry specification RTCA/DO-160E.  
DIMENSIONS  
Copyright © 2007  
Microsemi  
Page 4  
8-22-2007  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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