Datasheet > RT100KP180AE3TR

RT100KP180AE3TR

更新时间： 2024-02-23 06:30:34

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管电视
页数	文件大小	规格书
5页	260K
描述
100000W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 5A, 2 PIN

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RT100KP180AE3TR 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	O-PALF-W2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.73	其他特性：	HIGH RELIABILITY
最大击穿电压：	221 V	最小击穿电压：	200 V
击穿电压标称值：	210.5 V	外壳连接：	ISOLATED
最大钳位电压：	291 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	O-PALF-W2	JESD-609代码：	e3
湿度敏感等级：	1	最大非重复峰值反向功率耗散：	100000 W
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	1.61 W
认证状态：	Not Qualified	最大重复峰值反向电压：	180 V
子类别：	Transient Suppressors	表面贴装：	NO
技术：	AVALANCHE	端子面层：	MATTE TIN
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

RT100KP180AE3TR 数据手册

TECHNICAL DATA SHEET

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298

6 Lake Street, Lawrence, MA 01841

Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803

Website: http://www.microsemi.com

- High Reliability controlled devices

Unidirectional and Bidirectional

Transient Voltage Suppressor

- Economical series for thru hole mounting

- Unidirectional (A) and Bidirectional (CA) construction

- Selections for 40 to 400 V standoff voltages (VWM)

LEVELS

M, MA, MX, MXL

DEVICES

MRT100KP40A thru MRT100KP400CA, e3

FEATURES

High reliability controlled devices with wafer fabrication and assembly lot traceability

100 % surge tested devices

Suppresses transients up to 100 kW @ 6.4/69 µs

Fast response with less than 5ns turn-on time

Preferred 100kW TVS for aircraft power bus protection

Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes

specify various screening and conformance inspection options based on MIL-PRF-19500.

Refer to MicroNote 129 for more details on the screening options.

Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B

RoHS Compliant devices available by adding “e3” suffix

3σ lot norm screening performed on Standby Current I_D

CASE 5A

APPLICATIONS / BENEFITS

Protection from high power switching transients, induced RF, and lightning threats with

comparatively small package size (0.25 inch diameter)

Protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4

Pin injection protection per RTCA/DO-160E up to Level 4 for Waveform 4 (6.4/69 µs) on all

devices

Pin injection protection per RTCA/DO-160E up to Level 5 for Waveform 4 (6.4/69 µs) on device

types MRT100KP33A or CA up to MRT100KP260A or CA

Pin injection protection per RTCA/DO-160E up to Level 3 for Waveform 5A (40/120 µs) on all

devices

Pin injection protection per RTCA/DO-160E up to Level 4 for Waveform 5A (40/120 µs) on

device types MRT100KP33A or CA up to MRT100KP64A or CA

Consult Factory for other voltages with similar Peak Pulse Power capabilities

MAXIMUM RATINGS

Peak Pulse Power dissipation at 25 ºC: 100 kW at @ 6.4/69 µs in Figure 8 (also see Figures 1

and 2)

impulse repetition rate (duty factor) of 0.005 %

t_clamping(0 volts to V_BRmin.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional

Operating and Storage temperature: -65 ^ºC to +150 °C

Thermal Resistance: 17.5 °C/W junction to lead, or 77.5 °C/W junction to ambient when

mounted on FR4 PC board with 4 mm²copper pads (1 oz ) and track width 1 mm, length 25

Steady-state power dissipation: 7 Watts @ T_L= 27.5 °C or 1.61 Watts at T_A= 25 °C when

mounted on FR4 PC Board described above for thermal resistance

Forward surge: 250 Amps 8.3 ms half-sine wave for unidirectional devices only

Solder temperatures: 260 °C for 10 s (maximum)

RF01012 Rev A, August 2010

High Reliability Product Group

Page 1 of 5

12 3 4 5

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与RT100KP180AE3TR相关器件

型号	品牌	描述	获取价格	数据表
RT100KP180A-PBF	DIGITRON	Trans Voltage Suppressor Diode	获取价格
RT100KP180ATR	MICROSEMI	Trans Voltage Suppressor Diode, 100000W, 180V V(RWM), Unidirectional, 1 Element, Silicon,	获取价格
RT100KP180ATRE3	MICROSEMI	Trans Voltage Suppressor Diode, 100000W, 180V V(RWM), Unidirectional, 1 Element, Silicon,	获取价格
RT100KP180C	NJSEMI		获取价格
RT100KP180CA	MDE	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR	获取价格
RT100KP180CA	NJSEMI		获取价格

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