Datasheet > RS6E122BG

RS6E122BG

更新时间： 2024-04-09 19:00:32

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
13页	2862K
描述
RS6E122BG is a power MOSFET with low-on resistance and High power package, suitable for switching.

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RS6E122BG 数据手册

RS6E122BG

Nch 30V 155A Power MOSFET

Datasheet

llOutline

V_DSS

30V

2.16mΩ

±155A

89W

R_DS(on)(Max.)

HSOP8

I_D

P_D

llInner circuit

llFeatures

1) Low on - resistance

2) High power package (HSOP8)

3) Pb-free plating ; RoHS compliant

4) Halogen free

5) 100% Rg and UIS tested

llPackaging specifications

Embossed

Tape

Packing

Reel size (mm)

330

llApplication

Tape width (mm)

Quantity (pcs)

Taping code

Marking

Type

Switching

2500

TB1

RS6E122BG

llAbsolute maximum ratings (T = 25°C ,unless otherwise specified)

Parameter

Symbol

Value

Unit

V_DSS

Drain - Source voltage

±155

±120

±620

±20

Silicon limit (V =10V)

I_D

Continuous drain current

T_c= 25°C (V =10V)

I_D

I_DP

Pulsed drain current

Gate - Source voltage

V_GSS

I_AS

Avalanche current, single pulse

Avalanche energy, single pulse

E_AS

℃

P_D

Power dissipation

P_D

3.0

T_j

Junction temperature

150

T_stg

Operating junction and storage temperature range

-55 to +150

www.rohm.com

1/10

20231227 - Rev.002

12 3 4 5 6 7...13

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