Datasheet > RS1J

RS1J

更新时间： 2024-11-15 12:56:59

品牌	Logo	应用领域
森美特 - SUNMATE		二极管光电二极管
页数	文件大小	规格书
2页	287K
描述
1.0A patch fast recovery diode 600V SMA series

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数据手册

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RS1J 数据手册

RS1A - RS1M

SURFACE MOUNT FAST RECOVERY RECTIFIER DIODES

VOLTAGE RANGE: 50 - 1000V

CURRENT: 1.0 A

Features

Glass Passivated Die Construction

Ideally Suited for Automatic Assembly

Low Forward Voltage Drop, High Efficiency

Low Power Loss

Fast Recovery Time

Plastic Case Material has UL Flammability

Classification Rating 94V-O

SMA(DO-214AC)

Dim

MinMax

Mechanical Data

2.29

4.00

1.27

0.15

4.80

0.10

0.76

2.01

2.92

4.60

1.63

0.31

5.59

0.20

1.52

2.62

Case:SMA(DO-214AC), Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.064 grams (approx.)

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz resistive or inductive load.

Ratings at 25°C ambient temperature unless otherwise specified.

Symbol

Characteristic

RS1A RS1B RS1D RS1G RS1J RS1K RS1M

Unit

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

200 400

140 280

200 400

600

420

600

800 1000

560 700

800 1000

VRRM

VRMS

VDC

100

Maximum DC blocking voltage

Maximum average forward rectified current

at TL=90 C

I(AV)

1.0

Peak forward surge current

IFSM

30.0

1.3

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage at 1.0A

Maximum DC reverse current

at rated DC blocking voltage

Maximum reverse recovery time

TA=25 C

5.0

50.0

trr

TA=100 C

(NOTE 1)

150

250

500

Typical junction capacitance (NOTE 2)

R_QJL

C/W

°C

15.0

50.0

Typical thermal resistance (NOTE 3)

Operating junction and storage temperature range

TJ,TSTG

-65 to +150

Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A

2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas

1 of 2

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