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RS1D PDF预览

RS1D

更新时间: 2024-01-22 03:05:04
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
12页 64K
描述
SMA fast soft-recovery controlled avalanche rectifiers

RS1D 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC, SMA(W), 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.55
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-C2
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:1000 V
最大反向恢复时间:0.5 µs表面贴装:YES
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

RS1D 数据手册

 浏览型号RS1D的Datasheet PDF文件第1页浏览型号RS1D的Datasheet PDF文件第2页浏览型号RS1D的Datasheet PDF文件第4页浏览型号RS1D的Datasheet PDF文件第5页浏览型号RS1D的Datasheet PDF文件第6页浏览型号RS1D的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
SMA fast soft-recovery  
controlled avalanche rectifiers  
RS1 series  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VRMS  
root mean square voltage  
RS1A  
35  
V
V
V
V
V
V
V
A
RS1B  
70  
RS1D  
140  
280  
420  
560  
700  
1
RS1G  
RS1J  
RS1K  
RS1M  
IF(AV)  
IFSM  
average forward current  
averaged over any 20 ms period;  
Ttp = 110 °C; see Fig.2  
non-repetitive peak forward current  
t = 8.3 ms half sine wave;  
Tj = 25 °C prior to surge;  
VR = VRRMmax  
25  
A
Tstg  
Tj  
storage temperature  
junction temperature  
65  
65  
+175  
+175  
°C  
°C  
See Fig.3  
ELECTRICAL CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
forward voltage  
CONDITIONS  
TYP.  
MAX.  
UNIT  
VF  
IR  
IF = 1 A; see Fig.4  
1.3  
5
V
reverse current  
VR = VRRMmax; see Fig.5  
µA  
µA  
VR = VRRMmax; Tj = 165 °C; see Fig.5  
50  
trr  
reverse recovery time  
RS1A to RS1J  
when switched from IF = 0.5 A to IR = 1 A;  
measured at IR = 0.25 A; see Fig.9  
7
250  
300  
ns  
ns  
pF  
RS1K and RS1M  
diode capacitance  
Cd  
VR = 4 V; f = 1 MHz; see Fig.6  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth j-tp  
Rth j-a  
thermal resistance from junction to tie-point; see Fig.7  
thermal resistance from junction to ambient  
27  
K/W  
K/W  
K/W  
note 1  
note 2  
100  
150  
Notes  
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper 35 µm.  
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 µm. For more  
information please refer to the ‘General Part of associated Handbook’.  
2000 Feb 14  
3

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