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RS1B/2Q-E3 PDF预览

RS1B/2Q-E3

更新时间: 2024-11-07 05:40:47
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
2页 79K
描述
DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Signal Diode

RS1B/2Q-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.01
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向恢复时间:0.15 µs表面贴装:YES
端子面层:MATTE TIN端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

RS1B/2Q-E3 数据手册

 浏览型号RS1B/2Q-E3的Datasheet PDF文件第2页 
RS1A thru RS1K  
Vishay Semiconductors  
formerly General Semiconductor  
Surface Mount Fast Switching Rectifier  
DO-214AC (SMA)  
Reverse Voltage 50 to 800V  
Forward Current 1.0A  
Cathode Band  
0.065 (1.65)  
0.049 (1.25)  
Mounting Pad Layout  
0.110 (2.79)  
0.100 (2.54)  
0.066 MIN.  
(1.68 MIN.)  
0.094 MAX.  
(2.38 MAX.)  
0.177 (4.50)  
0.157 (3.99)  
0.012 (0.305)  
0.006 (0.152)  
0.052 MIN.  
(1.32 MIN.)  
0.220  
(5.58) REF  
0.090 (2.29)  
0.078 (1.98)  
Dimensions in inches  
and (millimeters)  
0.060 (1.52)  
0.008 (0.203)  
MAX.  
0.030 (0.76)  
0.208 (5.28)  
0.194 (4.93)  
Features  
Mechanical Data  
Case: JEDEC DO-214AC molded plastic over glass  
passivated chip  
Terminals: Solder plated, solderable per MIL-STD-750,  
Method 2026  
Polarity: Color band denotes cathode end  
Weight: 0.002 oz., 0.064 g  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
• Low profile surface mount package  
• Built-in strain relief  
• Fast switching for high efficiency  
• Glass passivated chip junction  
• High temperature soldering: 250°C/10 seconds  
at terminals  
Packaging codes/options:  
2Q/7.5K per 13" Reel (12mm Tape)  
2P/1.8K per 7" Reel (12mm Tape)  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbols RS1A RS1B RS1D RS1G RS1J RS1K Units  
Device marking code  
RA  
50  
35  
50  
RB  
100  
70  
RD  
200  
140  
200  
RG  
400  
280  
400  
RJ  
RK  
800  
500  
800  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
Maximum DC blocking voltage  
VRRM  
VRMS  
VDC  
600  
420  
600  
V
V
V
100  
Maximum average forward rectified current  
at TL=90°C  
IF(AV)  
1.0  
30  
A
Peak forward surge current  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method) TL=90°C  
IFSM  
A
RΘJA  
RΘJL  
105  
32  
Typical thermal resistance (1)  
°C/W  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Maximum instantaneous forward voltage at 1.0A  
VF  
1.30  
V
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25°C  
TA=125°C  
5.0  
50  
IR  
µA  
Maximum reverse recovery time at  
IF=0.5A, IR=1.0A, Irr=0.25A  
trr  
150  
10  
250  
500  
ns  
Typical junction capacitance at 4.0V, 1MHz  
CJ  
7.0  
pF  
Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2 x 0.2” (5.0 x 5.0mm) copper pad area  
Document Number 88707  
15-Sep-03  
www.vishay.com  
1

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