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RN1505(TE85L,F) PDF预览

RN1505(TE85L,F)

更新时间： 2024-11-19 21:13:19
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
7页 456K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-25

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中文翻译

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RN1505(TE85L,F) 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.77最大集电极电流 (IC)：0.1 A
最小直流电流增益 (hFE)：80元件数量：2
极性/信道类型：NPN最大功率耗散 (Abs)：0.3 W
子类别：BIP General Purpose Small Signal表面贴装：YES
晶体管元件材料：SILICONBase Number Matches：1

RN1505(TE85L,F) 数据手册

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RN1501∼RN1506  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1501, RN1502, RN1503  
RN1504, RN1505, RN1506  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
z Including two devices in SMV  
(super mini type with 5 leads)  
z With built-in bias resistors  
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
z Complementary to RN2501 to RN2506  
Equivalent Circuit and Bias Resister Values  
Type No.  
R1 (kΩ)  
R2 (kΩ)  
JEDEC  
―
―
RN1501  
RN1502  
RN1503  
RN1504  
RN1505  
RN1506  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
JEITA  
TOSHIBA  
2-3L1A  
Weight: 6.8mg (typ.)  
22  
47  
2.2  
4.7  
Equivalent Circuit (Top View)  
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN1501 to 1506  
Collector-emitter voltage  
RN1501 to 1504  
RN1505, 1506  
10  
Emitter-base voltage  
V
V
EBO  
5
Collector current  
I
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
*
300  
C
RN1501 to 1506  
T
150  
j
T
stg  
−55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
* Total rating  
Start of commercial production  
1988-10  
1
2014-03-01  
1234567

中文翻译

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