Datasheet > RM8N700T2

RM8N700T2

更新时间： 2024-11-26 18:05:03

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
10页	799K
描述
Vdss (V) : 700 V;Id @ 25C (A) : 8.0 A;Rds-on (typ) (mOhms) : 540 mOhms;Total Gate Charge (nQ) typ : 14.5 nQ;Maximum Power Dissipation (W) : 80 W;Vgs(th) (typ) : 3 V;Input Capacitance (Ciss) : 680 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RM8N700T2 数据手册

RM8N700HD

RM8N700T2

RM8N700TI

Super Junction Power MOSFET

ꢀꢀĊ

N-Channel

General Description

The series of devices use advanced super junction

technology and design to provide excellent R^DS(ON)with low

gate charge. This super junction MOSFET fits the industry’s

AC-DC SMPS requirements for PFC, AC/DC power

conversion, and industrial power applications.

V_DS

700

540

mΩ

R_{DS(ON) TYP.}

I_D

Features

ƽNew technology for high voltage device

ƽLow on-resistance and low conduction losses

ƽSmall package

ƽUltra Low Gate Charge cause lower driving requirements

ƽ100% Avalanche Tested

ƽROHS compliant

Application

ƽꢀ Power factor correction˄PFC˅

ƽꢀ Switched mode power supplies(SMPS)

ƽꢀ Uninterruptible Power Supply˄UPS˅

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

Marking

RM8N700HD

RM8N700T2

RM8N700TI

TO-263

8N700

TO-220

8N700

TO-220F

TO-263

TO-220

TO-220F

Unit

Table 1. Absolute Maximum Ratings (T_C=25ć)

RM8N700HD

RM8N700T2

Parameter

Symbol

RM8N700TI

700

Drain-Source Voltage (VGS=0V˅

Gate-Source Voltage (VDS=0V)

VDS

VGS

f30

Continuous Drain Current at Tc=25°C

5.2

I_{D (DC)}

I_{DM (pluse)}

P_D

Continuous Drain Current at Tc=100°C

5.2*

24*

(Note 1)

Pulsed drain current

Maximum Power Dissipation(Tc=25ć)

31.7

0.25

Derate above 25°C

0.64

W/°C

Single pulse avalanche energy ^{(Note 2)}

185

EAS

Avalanche current^{(Note 1)}

I_AR

Repetitive Avalanche energy ˈt_ARlimited by T_jmax

0.4

E_AR

(Note 1)

2016-12

REV:O15

12 3 4 5 6 7...10

中文翻译

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