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RLD03N06CLESM

更新时间： 2024-11-28 22:23:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关
页数 文件大小 规格书
13页 192K
描述
0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs

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RLD03N06CLESM 数据手册

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RLD03N06CLE,  
RLD03N06CLESM, RLP03N06CLE  
S E M I C O N D U C T O R  
0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped  
Logic Level N-Channel Enhancement-Mode Power MOSFETs  
July 1996  
Features  
Packages  
JEDEC TO-220AB  
• 0.30A, 60V  
SOURCE  
DRAIN  
GATE  
• rDS(ON) = 6.0Ω  
• Built in Current Limit ILIMIT 0.140 to 0.210A at 150oC  
• Built in Voltage Clamp  
• Temperature Compensating PSPICE Model  
• 2kV ESD Protected  
DRAIN  
(FLANGE)  
• Controlled Switching Limits EMI and RFI  
JEDEC TO-251AA  
Description  
SOURCE  
DRAIN  
GATE  
The RLD03N06CLE, RLD03N06CLESM and RLP03N06CLE  
are intelligent monolithic power circuits which incorporate a lat-  
eral bipolar transistor, resistors, zener diodes and a power MOS  
transistor. The current limiting of these devices allow it to be used  
safely in circuits where a shorted load condition may be encoun-  
tered. The drain-source voltage clamping offers precision control  
of the circuit voltage when switching inductive loads. The “Logic  
Level” gate allows this device to be fully biased on with only 5.0V  
from gate to source, thereby facilitating true on-off power control  
directly from logic level (5V) integrated circuits.  
DRAIN  
(FLANGE)  
JEDEC TO-252AA  
DRAIN  
(FLANGE)  
GATE  
SOURCE  
The RLD03N06CLE, RLD03N06CLESM and RLP03N06CLE  
incorporate ESD protection and are designed to withstand 2kV  
(Human Body Model) of ESD.  
Symbol  
D
PACKAGING AVAILABILITY  
PART NUMBER  
PACKAGE  
TO-251AA  
BRAND  
03N06C  
RLD03N06CLE  
G
RLD03N06CLESM TO-252AA  
RLP03N06CLE TO-220AB  
03N06C  
03N06CLE  
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-252AA variant in tape and reel, i.e.  
RLD03N06CLESM9A.  
S
Formerly developmental type TA49026.  
o
Absolute Maximum Ratings T = +25 C  
C
RLD03N06CLE,  
RLD03N06CLESM,  
RLP03N06CLE  
UNITS  
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V  
60  
60  
V
V
V
DSS  
Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
DGR  
Gate Source Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
Reverse Voltage Gate Bias Not Allowed  
+5.5  
GS  
Drain Current  
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
Self Limited  
D
D
Power Dissipation  
o
T
= +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
30  
0.2  
W
C
o
o
Derate above +25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P  
W/ C  
T
Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . . . . ESD  
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T  
2
KV  
o
-55 to +175  
C
STG  
J
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.  
File Number 3948.3  
Copyright © Harris Corporation 1996  
1
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RLD03N06CLESM 替代型号

型号 品牌 替代类型 描述 数据表
RLD03N06CLESM INTERSIL

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