Datasheet > RL205-G

RL205-G

更新时间： 2024-11-21 12:46:55

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
3页	77K
描述
General Purpose Silicon Rectifier

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中文翻译

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数据手册

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RL205-G 数据手册

General Purpose Silicon Rectifier

RL201-G Thru. RL207-G

Forward Current: 2.0A

Reverse Voltage: 50 to 1000V

RoHS Device

DO-15

Features

-Diffused Junction.

-Low forward voltage drop.

1.000(25.40) Min.

-Low reverse leakage current.

-High current capability.

0.300(7.6)

0.228(5.8)

Mechanical data

0.141(3.6) DIA.

0.102(2.6) DIA.

-Case: JEDEC DO-15 molded plastic.

-Epoxy: UL94V-0 rate flame retardant

-Polarity: Color band denotes cathode end

Mounting position: Any

1.000(25.40) Min.

0.035(0.9) DIA.

0.028(0.7) DIA.

-Weight: 0.39gram

Dimensions in inches and (millimeter)

Maximum Ratings and Electrical Characteristics

Ratings at 25°C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load derate current by 20%.

RL202-G RL203-G RL204-G RL205-G RL206-G RL207-G

Symbol

RL201-G

Parameter

Unit

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum repetitive peak reverse voltage

Maximum RMS voltage

RRM

RMS

100

1000

Maximum DC blocking voltage

Maximum average forward rectified current

(AV)

2.0

0.375"(9.5mm) lead length @T =50°C

Peak forward surge current, 8.3ms single

half sine-wave superimposed on rated load

(JEDEC method)

IFSM

1.1

Maximum forward voltage at 2.0A DC

Maximum reverse current

at rated DC blocking voltage

=25°C

μA

=100°C

°C/W

°C

Typical junction capacitance (Note 1)

Typical thermal resistance (Note 2)

Operating temperature range

Storage temperature range

θJA

-55 ~ +150

TSTG

°C

NOTES:

1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2. Thermal resistance junction to ambient.

Company reserves the right to improve product design , functions and reliability without notice.

REV:B

Page 1

QW-BG011

Comchip Technology CO., LTD.

12 3

中文翻译

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