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RL101(G) PDF预览

RL101(G)

更新时间: 2024-11-21 20:47:03
品牌 Logo 应用领域
鲁光 - LGE /
页数 文件大小 规格书
2页 1123K
描述
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RL101(G) 技术参数

Case Style:A-405IF(A):1.0
Maximum recurrent peak reverse voltage:50Peak forward surge current:30
Maximum instantaneous forward voltage:1.0@IVA(A):1.0
Maximum reverse current:5.0TRR(nS):/
class:Diodes

RL101(G) 数据手册

 浏览型号RL101(G)的Datasheet PDF文件第2页 
RL101G-RL107G  
Plastic Silicon Rectifiers  
VOLTAGE RANGE: 50 --- 1000 V  
CURRENT: 1.0 A  
A-405  
Features  
Low cost  
Diffused junction  
Glass passivated chip junction  
High forward voltage drop  
High current capability  
Easilycleaned with Freon,Alcohol,lsopropanol  
and similar solvents  
The plastic material carries U/L recognition 94V-O  
Mechanical Data  
Case:JEDEC A- 405,molded plastic  
Terminals: Axial lead ,solderable per  
MIL- STD-202,Method208  
Polarity: Color band denotes cathode end  
Weight: 0.008 ounces,0.23 grams  
Dimensions in inches and (millimeters)  
Mounting position: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
RL  
101G  
RL  
102G  
RL  
RL  
RL  
RL  
106G  
RL  
107G  
UNITS  
103G 104G 105G  
V
V
V
Maximumrecurrent peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
VRRM  
VRMS  
VDC  
Maximum DC blocking voltage  
100  
1000  
Maxximum average forw ard rectified current  
A
1.0  
IF(AV)  
9.5mm lead length, @T =75  
A
Peak forw ard surge current  
A
IFSM  
30.0  
1.0  
8.3ms single half-sine-w ave  
superimposed on rated load @TA=125  
Maximum instantaneous forw ard voltage  
@ 1.0 A  
V
VF  
5.0  
Maximumreverse current  
@TA=25  
µ A  
IR  
50.0  
at rated DC blocking voltage @TA=100  
15  
pF  
Typical junction capacitance  
Typical thermal resistance  
(Note1)  
(Note2)  
CJ  
50  
R
/W  
JA  
Operating junction temperature range  
-55----+150  
-55----+150  
TJ  
Storage temperature range  
TSTG  
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.  
2. Thermal resistance from junction to ambient.  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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