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RJK03L3DNS-00-J5 PDF预览

RJK03L3DNS-00-J5

更新时间: 2024-11-23 12:46:55
品牌 Logo 应用领域
瑞萨 - RENESAS 肖特基二极管
页数 文件大小 规格书
7页 130K
描述
Silicon N Channel Power MOS FET with Schottky Barrier Diode

RJK03L3DNS-00-J5 数据手册

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Preliminary Datasheet  
RJK03L3DNS  
Silicon N Channel Power MOS FET with Schottky Barrier Diode  
R07DS0780EJ0110  
Power Switching  
Rev.1.10  
May 30, 2012  
Features  
High speed switching  
Capable of 4.5 V gate drive  
Low drive current  
High density mounting  
Low on-resistance  
RDS(on) = 5.3 mtyp. (at VGS = 10 V)  
Pb-free  
Halogen-free  
Outline  
RENESAS Package code: PWSN0008JB-A  
(Package name: HWSON-8)  
5
6
7 8  
D D D D  
8
7
6
5
1, 2, 3  
4
5, 6, 7, 8 Drain  
Source  
Gate  
4
G
1
2
3
4
S
1
S S  
2
3
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
30  
Unit  
V
V
±20  
25  
A
Note1  
Drain peak current  
ID(pulse)  
100  
25  
A
Body-drain diode reverse drain current  
Avalanche current  
IDR  
A
Note 2  
IAP  
10.5  
11  
A
Note 2  
Avalanche energy  
EAs  
mJ  
W
Channel dissipation  
Pch Note3  
ch-c Note3  
Tch  
15  
Channel to case thermal impedance  
Channel temperature  
Storage temperature  
8.33  
150  
C/W  
C  
C  
Tstg  
–55 to +150  
Notes: 1. PW 10 s, duty cycle 1%  
2. Value at Tch = 25C, Rg 50   
3. Tc = 25C  
R07DS0780EJ0110 Rev.1.10  
May 30, 2012  
Page 1 of 6  

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